JPS561058A - Exposure method - Google Patents

Exposure method

Info

Publication number
JPS561058A
JPS561058A JP7742079A JP7742079A JPS561058A JP S561058 A JPS561058 A JP S561058A JP 7742079 A JP7742079 A JP 7742079A JP 7742079 A JP7742079 A JP 7742079A JP S561058 A JPS561058 A JP S561058A
Authority
JP
Japan
Prior art keywords
exposure
flux
intensity
polarizers
polarizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7742079A
Other languages
Japanese (ja)
Inventor
Shigeru Watari
Kenzo Hatada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7742079A priority Critical patent/JPS561058A/en
Publication of JPS561058A publication Critical patent/JPS561058A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable exposure to be controlled with high precision, by optionally changing illumination intensity of an exposure light source using 2 polarizers, and controlling the exposure by time and intensity. CONSTITUTION:Luminous flux 4 in parallel to a polarization face is selected with polarizer 3 out of flux 2 radiated from mercury lamp 1 being the light source of an exposing unit, and the polarization plane of polarizer 5 is arranged so as to set the angle between both the planes of polarizers 5 and 3 to theta. As a result, the intensity of flux 6 passing through polarizer 5 is proportional to costheta. This flux 6 prints the pattern of photomask 7 on the photoresist on substrate 8, permitting exposure intensity to be continuously and easily changed by changing angle theta of the polarizers, therefore, control of exposure to the carried out in an extremely simple manner.
JP7742079A 1979-06-18 1979-06-18 Exposure method Pending JPS561058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7742079A JPS561058A (en) 1979-06-18 1979-06-18 Exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7742079A JPS561058A (en) 1979-06-18 1979-06-18 Exposure method

Publications (1)

Publication Number Publication Date
JPS561058A true JPS561058A (en) 1981-01-08

Family

ID=13633458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7742079A Pending JPS561058A (en) 1979-06-18 1979-06-18 Exposure method

Country Status (1)

Country Link
JP (1) JPS561058A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107967A (en) * 1975-03-11 1976-09-24 Asahi Carbon Co Ltd
JPS62502496A (en) * 1985-04-16 1987-09-24 ミネソタ　マイニング　アンド　マニユフアクチユアリング　コンパニ− Improving exposure latitude in proof printing
US6661499B2 (en) 1998-06-12 2003-12-09 Nikon Corporation Projection exposure apparatus with a catadioptric projection optical system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107967A (en) * 1975-03-11 1976-09-24 Asahi Carbon Co Ltd
JPS62502496A (en) * 1985-04-16 1987-09-24 ミネソタ　マイニング　アンド　マニユフアクチユアリング　コンパニ− Improving exposure latitude in proof printing
US6661499B2 (en) 1998-06-12 2003-12-09 Nikon Corporation Projection exposure apparatus with a catadioptric projection optical system

Similar Documents

Publication Publication Date Title
JPS57200042A (en) Exposure method for chemically machinable photosensitive glass
JPS5692536A (en) Pattern formation method
KR960000179B1 (en) Photomask
JPS561058A (en) Exposure method
JPS5493974A (en) Projection-system mask alignment unit
JPS53136968A (en) Photomask
JPS55144243A (en) Photomask
JPS5743420A (en) Mask alignment method
JPS52102729A (en) Original copy illumination for monochroic electronic copying machine
JPS57102611A (en) Liquid crystal display device equipped with mask
JPS55159428A (en) Exposure device
JPS56144539A (en) Formation of fine pattern
JPS57132008A (en) Measuring method for pattern size
JPS55128832A (en) Method of making minute pattern
JPS63313819A (en) exposure equipment
JPS5680043A (en) Far ultraviolet exposing method
JPS5347825A (en) Photoresist exposure
JPS5669634A (en) Exposure method of photomask and its device
JPS5491183A (en) Production of semiconductor device
JPS534536A (en) Microfilm reader printer
JPS55150224A (en) Apparatus for printing pattern
JPS5726877A (en) Copying machine
JPS6473617A (en) Aligning method of projection system
JPS5596952A (en) Production of photomask
JPS5454579A (en) Exposure method