JPS56107639A - Solid switch - Google Patents
Solid switchInfo
- Publication number
- JPS56107639A JPS56107639A JP1028780A JP1028780A JPS56107639A JP S56107639 A JPS56107639 A JP S56107639A JP 1028780 A JP1028780 A JP 1028780A JP 1028780 A JP1028780 A JP 1028780A JP S56107639 A JPS56107639 A JP S56107639A
- Authority
- JP
- Japan
- Prior art keywords
- photothyristor
- transistor
- cathode
- turned
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title 1
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To operate the photothyristor with high dV/dt and high sensitivity, by connecting a transistor controlled by the phototransistor, between the gate and cathode of the photothyristor which is turned on by an optical signal. CONSTITUTION:When a light beam is not emitted from the light emission diode 1, a base current flows into the base of the transistor 6 through the current control element 8, the transistor 6 is turned on, and the gate and cathode of the photothyristor 3 is short-circuited. Accordingly, as for the photothyristor 3, dV/dt becomes extremely high since the grid and cathode is short-circuited. Subsequently, when an optical signal 2 is output from the light emission diode 1, the phototransistor 7 is turned on, and the base and emitter of the transistor 6 is short-circuited. Therefore, the transistor 6 is turned off, and the gate and cathode of the photothyristor 3 are released. Accordingly, the gate trigger sensitivity IFT of the photothyristor 3 becomes extremely high.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028780A JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1028780A JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56107639A true JPS56107639A (en) | 1981-08-26 |
Family
ID=11746088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1028780A Pending JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56107639A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246020B1 (en) | 1997-06-30 | 2001-06-12 | Kabushiki Kaisha Saginomiya Seisakusho | Micro switch having silver containing contacts |
-
1980
- 1980-01-31 JP JP1028780A patent/JPS56107639A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246020B1 (en) | 1997-06-30 | 2001-06-12 | Kabushiki Kaisha Saginomiya Seisakusho | Micro switch having silver containing contacts |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2571148B1 (en) | PHOTODIODE LIGHT BEAM DETECTOR WITH OPERATING POINT ADJUSTMENT CIRCUIT | |
| JPS5727087A (en) | Wavelength sweeping laser | |
| JPS56107639A (en) | Solid switch | |
| JPS56106259A (en) | Control device for quantity of light | |
| JPS55133131A (en) | Solid-state switch unit | |
| JPS5546873A (en) | Light-triggered thyristor | |
| JPS5518906A (en) | Photoelectric position locator | |
| JPS55138927A (en) | Photo-coupling semiconductor switch device | |
| GB2002950A (en) | Optical radiation transmitter | |
| JPS5725164A (en) | Firing circuit device | |
| SU966858A1 (en) | Device for switching-on light emitting diode | |
| JPS54162496A (en) | Driver circuit of photo semiconductor device | |
| JPS57183128A (en) | Optically driven electronic switch | |
| GB996761A (en) | Improvements in or relating to pushbutton devices | |
| JPS56138336A (en) | Optical not circuit | |
| JPS56143643A (en) | Field emission type electron gun | |
| JPS57185577A (en) | Body to be identified for individual identification | |
| ATE64773T1 (en) | INSTALLATION DEVICE WITH INFRARED TRANSMITTER. | |
| JPS5390802A (en) | Control system for light receiving system | |
| JPS53148476A (en) | Signal level display circuit | |
| JPS5483395A (en) | Light beam warning unit | |
| JPS533091A (en) | Semiconductor laser | |
| JPS55151825A (en) | Electromagnetic wave coupled semiconductor switch device | |
| JPS5780731A (en) | Detecting device for improper semiconductor | |
| JPS5546872A (en) | Light-triggered thyristor |