JPS56111190A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56111190A
JPS56111190A JP1266080A JP1266080A JPS56111190A JP S56111190 A JPS56111190 A JP S56111190A JP 1266080 A JP1266080 A JP 1266080A JP 1266080 A JP1266080 A JP 1266080A JP S56111190 A JPS56111190 A JP S56111190A
Authority
JP
Japan
Prior art keywords
mosfets
column
timing signal
voltage
ram1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1266080A
Other languages
Japanese (ja)
Other versions
JPS603710B2 (en
Inventor
Tomotaka Saito
Kenichi Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55012660A priority Critical patent/JPS603710B2/en
Publication of JPS56111190A publication Critical patent/JPS56111190A/en
Publication of JPS603710B2 publication Critical patent/JPS603710B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To enable high capacity and high speed, by forming the information readout timing signal via the precharge means connected with a number of MOSFETs in comparison with the columns of ROMs. CONSTITUTION:The node N1 connected with the column of a selected RAM1 is precharged and the node N2 connected to the column which is connected with P type MOSFETs 13... many in number than the number of P type MOSFETs in response to sets of information connected to the column of RAM1, is similarly precharged. Then, the columns are connected to ground, the nodes N1, N2 are discharged and the voltage of clocked inverters 7, 15 is similarly increased. In this case, with the difference of the number of MOSFETs, the increase in the voltage is slow, and the inverter 15 reaches the threshold voltage after the inverter 7 reaches the threshold voltage, to develop the information readout timing signal phiL. Thus, due to the dispersion of threshold voltages, without considering the greater margin period, the specified timing signal is formed to increase the readout speed and the memory capacity.
JP55012660A 1980-02-05 1980-02-05 semiconductor storage device Expired JPS603710B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55012660A JPS603710B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55012660A JPS603710B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56111190A true JPS56111190A (en) 1981-09-02
JPS603710B2 JPS603710B2 (en) 1985-01-30

Family

ID=11811510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55012660A Expired JPS603710B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS603710B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126684A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Semiconductor integrated circuit with built-in memory
JPS61180990A (en) * 1985-10-25 1986-08-13 Nec Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5848002A (en) * 1994-12-27 1998-12-08 Nkk Corporation Information storage apparatus and method for operating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126684A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Semiconductor integrated circuit with built-in memory
JPS61180990A (en) * 1985-10-25 1986-08-13 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS603710B2 (en) 1985-01-30

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