JPS56112720A - Supperssion of thermal denaturation of compound semiconductor - Google Patents

Supperssion of thermal denaturation of compound semiconductor

Info

Publication number
JPS56112720A
JPS56112720A JP1452680A JP1452680A JPS56112720A JP S56112720 A JPS56112720 A JP S56112720A JP 1452680 A JP1452680 A JP 1452680A JP 1452680 A JP1452680 A JP 1452680A JP S56112720 A JPS56112720 A JP S56112720A
Authority
JP
Japan
Prior art keywords
compound semiconductor
periodic table
thermal denaturation
iii
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452680A
Other languages
Japanese (ja)
Inventor
Hisatsune Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452680A priority Critical patent/JPS56112720A/en
Publication of JPS56112720A publication Critical patent/JPS56112720A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/904—Thermal treatments, e.g. annealing or sintering of Group III-V semiconductors

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To prevent the thermal denaturation of the III-V group compound semiconductor in the Periodic Table due to the heat treatment thereof by heat treating the semiconductor in an atmosphere containing alkyl compound vapor of the V group elements in the Periodic Table. CONSTITUTION:GaAs to which Si ion is, for example, injected is annealed at 850 deg.C in hydrogen gas containing trimethyl arsine in concentration of 50-1,000ppm for 20min. Thus, predicted activation rate and impurity profile can be obtained without surface deterioration. The effect of suppressing the thermal denaturation can be also obtained when the liquid phase epitaxial growth of the III-V Group compound semiconductor in the Periodic Table is conducted in alkyl compound vapor or when the diffusion to the III-V compound semiconductor in the Periodic Table is conducted in the alkyl atmosphere.
JP1452680A 1980-02-08 1980-02-08 Supperssion of thermal denaturation of compound semiconductor Pending JPS56112720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452680A JPS56112720A (en) 1980-02-08 1980-02-08 Supperssion of thermal denaturation of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452680A JPS56112720A (en) 1980-02-08 1980-02-08 Supperssion of thermal denaturation of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS56112720A true JPS56112720A (en) 1981-09-05

Family

ID=11863560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452680A Pending JPS56112720A (en) 1980-02-08 1980-02-08 Supperssion of thermal denaturation of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS56112720A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879259A (en) * 1987-09-28 1989-11-07 The Board Of Trustees Of The Leland Stanford Junion University Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044776A (en) * 1973-08-24 1975-04-22
JPS50137396A (en) * 1974-04-22 1975-10-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044776A (en) * 1973-08-24 1975-04-22
JPS50137396A (en) * 1974-04-22 1975-10-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879259A (en) * 1987-09-28 1989-11-07 The Board Of Trustees Of The Leland Stanford Junion University Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

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