JPS5613764A - Bipolar transistor - Google Patents

Bipolar transistor

Info

Publication number
JPS5613764A
JPS5613764A JP8927880A JP8927880A JPS5613764A JP S5613764 A JPS5613764 A JP S5613764A JP 8927880 A JP8927880 A JP 8927880A JP 8927880 A JP8927880 A JP 8927880A JP S5613764 A JPS5613764 A JP S5613764A
Authority
JP
Japan
Prior art keywords
discs
plates
chips
doped
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8927880A
Other languages
English (en)
Inventor
Daaruberuku Rainharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS5613764A publication Critical patent/JPS5613764A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/40Vertical BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281Base electrodes for bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00Gettering within semiconductor bodies
    • H10P36/03Gettering within semiconductor bodies within silicon bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8927880A 1979-07-03 1980-07-02 Bipolar transistor Pending JPS5613764A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2926785A DE2926785C2 (de) 1979-07-03 1979-07-03 Bipolarer Transistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
JPS5613764A true JPS5613764A (en) 1981-02-10

Family

ID=6074781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8927880A Pending JPS5613764A (en) 1979-07-03 1980-07-02 Bipolar transistor

Country Status (5)

Country Link
US (1) US4451843A (ja)
EP (1) EP0022204B1 (ja)
JP (1) JPS5613764A (ja)
AT (1) ATE898T1 (ja)
DE (1) DE2926785C2 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549196A (en) * 1982-08-04 1985-10-22 Westinghouse Electric Corp. Lateral bipolar transistor
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
DE3402517A1 (de) * 1984-01-26 1985-08-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
JPH0770474B2 (ja) * 1985-02-08 1995-07-31 株式会社東芝 化合物半導体装置の製造方法
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
EP1029359A4 (en) * 1997-11-10 2007-06-06 Don L Kendall Quantum ridges and tips
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6762094B2 (en) * 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
US20070034909A1 (en) * 2003-09-22 2007-02-15 James Stasiak Nanometer-scale semiconductor devices and method of making

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
NL82014C (ja) * 1949-11-30
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2641638A (en) * 1952-03-27 1953-06-09 Rca Corp Line-contact transistor
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
GB1053069A (ja) * 1963-06-28
DE1514727A1 (de) * 1965-09-30 1969-06-19 Schaefer Dipl Phys Siegfried Herstellung von pn-UEbergaengen durch plastische Verformung von Halbleitern
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices
DE1916555A1 (de) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung
GB1297046A (ja) * 1969-08-25 1972-11-22
DE2244062A1 (de) * 1972-09-08 1974-03-28 Licentia Gmbh Ohmscher anschlusskontakt fuer ein silizium-halbleiterbauelement
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2547262C3 (de) * 1975-10-22 1981-07-16 Reinhard Dr. 7101 Flein Dahlberg Thermoelektrische Anordnung mit großen Temperaturgradienten und Verwendung
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
DE2837394A1 (de) * 1978-08-26 1980-03-20 Semikron Gleichrichterbau Halbleiter-brueckengleichrichteranordnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
ATE898T1 (de) 1982-05-15
US4451843A (en) 1984-05-29
DE2926785C2 (de) 1985-12-12
DE2926785A1 (de) 1981-01-15
EP0022204B1 (de) 1982-04-21
EP0022204A1 (de) 1981-01-14

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