JPS5615073A - Dual terminal reverse conductive thyristor - Google Patents

Dual terminal reverse conductive thyristor

Info

Publication number
JPS5615073A
JPS5615073A JP9243279A JP9243279A JPS5615073A JP S5615073 A JPS5615073 A JP S5615073A JP 9243279 A JP9243279 A JP 9243279A JP 9243279 A JP9243279 A JP 9243279A JP S5615073 A JPS5615073 A JP S5615073A
Authority
JP
Japan
Prior art keywords
thyristor
junction
diode
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9243279A
Other languages
Japanese (ja)
Other versions
JPS6141147B2 (en
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9243279A priority Critical patent/JPS5615073A/en
Publication of JPS5615073A publication Critical patent/JPS5615073A/en
Publication of JPS6141147B2 publication Critical patent/JPS6141147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the occurence of breakdown of a diode before the ignition of the thyristor by a method wherein the voltage blocking capacity of a reverse blocking junction of the diode part is made to be higher than the switching voltage of a breakover junction of the thyristor part. CONSTITUTION:The dual terminal reverse conductive thyristor is constituted of the diode part B and the thyristor part A. The diode part B is formed with an n-type region 42' and a p-type region 43'. The thyristor part A is formed with a four layers constitution, i.e., a p-type emitter region 41, an n-type base region 42, a p-type base region 43 and an n-type emitter region 44. The breakover junction 47 of the thyristor part A and the reverse blocking in junction 47' of the diode part B is separated by a mesa groove 48, and the voltage blocking capacity of the reverse blocking junction 47' of the diode part B is made to be higher than the switching voltage of the breakover junction 47 of the thyristor part A.
JP9243279A 1979-07-18 1979-07-18 Dual terminal reverse conductive thyristor Granted JPS5615073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9243279A JPS5615073A (en) 1979-07-18 1979-07-18 Dual terminal reverse conductive thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9243279A JPS5615073A (en) 1979-07-18 1979-07-18 Dual terminal reverse conductive thyristor

Publications (2)

Publication Number Publication Date
JPS5615073A true JPS5615073A (en) 1981-02-13
JPS6141147B2 JPS6141147B2 (en) 1986-09-12

Family

ID=14054266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9243279A Granted JPS5615073A (en) 1979-07-18 1979-07-18 Dual terminal reverse conductive thyristor

Country Status (1)

Country Link
JP (1) JPS5615073A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62230540A (en) * 1986-03-31 1987-10-09 Hitachi Ltd Paper sheets delivery mechanism

Also Published As

Publication number Publication date
JPS6141147B2 (en) 1986-09-12

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