JPS5616672A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPS5616672A JPS5616672A JP9143079A JP9143079A JPS5616672A JP S5616672 A JPS5616672 A JP S5616672A JP 9143079 A JP9143079 A JP 9143079A JP 9143079 A JP9143079 A JP 9143079A JP S5616672 A JPS5616672 A JP S5616672A
- Authority
- JP
- Japan
- Prior art keywords
- recess
- sputtering
- target
- film forming
- forming speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To enhance the sputtering efficiency and increase the film forming speed by specifying the area ratio of the total of faces on which ion is hit inside the recess of a target to the inside of the recess. CONSTITUTION:The normals of recess 2 of target 1 are formed so that arbitrary faces on which sputtered ion 3 is hit inside the same recess amounts to 50-96% of the total area of the inside of recess 3. Thus, the sputtering efficiency is enhanced and the film forming speed is increased without deteriorating the film quality. In addition, sputtering in a high vacuum is enabled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9143079A JPS5931592B2 (en) | 1979-07-18 | 1979-07-18 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9143079A JPS5931592B2 (en) | 1979-07-18 | 1979-07-18 | Target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5616672A true JPS5616672A (en) | 1981-02-17 |
| JPS5931592B2 JPS5931592B2 (en) | 1984-08-02 |
Family
ID=14026147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9143079A Expired JPS5931592B2 (en) | 1979-07-18 | 1979-07-18 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5931592B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861461U (en) * | 1981-10-19 | 1983-04-25 | 富士通株式会社 | sputtering equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0360493U (en) * | 1990-09-20 | 1991-06-13 |
-
1979
- 1979-07-18 JP JP9143079A patent/JPS5931592B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861461U (en) * | 1981-10-19 | 1983-04-25 | 富士通株式会社 | sputtering equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5931592B2 (en) | 1984-08-02 |
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