JPS5619660A - Complementary mis logic circuit - Google Patents

Complementary mis logic circuit

Info

Publication number
JPS5619660A
JPS5619660A JP9535479A JP9535479A JPS5619660A JP S5619660 A JPS5619660 A JP S5619660A JP 9535479 A JP9535479 A JP 9535479A JP 9535479 A JP9535479 A JP 9535479A JP S5619660 A JPS5619660 A JP S5619660A
Authority
JP
Japan
Prior art keywords
region
layer
type
channel
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9535479A
Other languages
English (en)
Other versions
JPS5937585B2 (ja
Inventor
Hideki Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54095354A priority Critical patent/JPS5937585B2/ja
Publication of JPS5619660A publication Critical patent/JPS5619660A/ja
Publication of JPS5937585B2 publication Critical patent/JPS5937585B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP54095354A 1979-07-26 1979-07-26 相補性ｍｉｓ論理回路 Expired JPS5937585B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54095354A JPS5937585B2 (ja) 1979-07-26 1979-07-26 相補性ｍｉｓ論理回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54095354A JPS5937585B2 (ja) 1979-07-26 1979-07-26 相補性ｍｉｓ論理回路

Publications (2)

Publication Number Publication Date
JPS5619660A true JPS5619660A (en) 1981-02-24
JPS5937585B2 JPS5937585B2 (ja) 1984-09-11

Family

ID=14135314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54095354A Expired JPS5937585B2 (ja) 1979-07-26 1979-07-26 相補性ｍｉｓ論理回路

Country Status (1)

Country Link
JP (1) JPS5937585B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190423A (en) * 1981-05-19 1982-11-24 Toshiba Corp Semiconductor circuit
JPS598431A (ja) * 1982-07-07 1984-01-17 Hitachi Ltd バツフア回路
JPS62150749U (ja) * 1986-03-14 1987-09-24
JPS63131366A (ja) * 1986-11-20 1988-06-03 Csk Corp カ−ドリ−ダ−
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
US5469085A (en) * 1991-01-12 1995-11-21 Shibata; Tadashi Source follower using two pairs of NMOS and PMOS transistors
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190423A (en) * 1981-05-19 1982-11-24 Toshiba Corp Semiconductor circuit
JPS598431A (ja) * 1982-07-07 1984-01-17 Hitachi Ltd バツフア回路
JPS62150749U (ja) * 1986-03-14 1987-09-24
JPS63131366A (ja) * 1986-11-20 1988-06-03 Csk Corp カ−ドリ−ダ−
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
US5469085A (en) * 1991-01-12 1995-11-21 Shibata; Tadashi Source follower using two pairs of NMOS and PMOS transistors

Also Published As

Publication number Publication date
JPS5937585B2 (ja) 1984-09-11

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