JPS5619745B2 - - Google Patents
Info
- Publication number
- JPS5619745B2 JPS5619745B2 JP2675875A JP2675875A JPS5619745B2 JP S5619745 B2 JPS5619745 B2 JP S5619745B2 JP 2675875 A JP2675875 A JP 2675875A JP 2675875 A JP2675875 A JP 2675875A JP S5619745 B2 JPS5619745 B2 JP S5619745B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50026758A JPS51101477A (en) | 1975-03-04 | 1975-03-04 | Handotaisochi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50026758A JPS51101477A (en) | 1975-03-04 | 1975-03-04 | Handotaisochi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51101477A JPS51101477A (en) | 1976-09-07 |
| JPS5619745B2 true JPS5619745B2 (de) | 1981-05-09 |
Family
ID=12202167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50026758A Granted JPS51101477A (en) | 1975-03-04 | 1975-03-04 | Handotaisochi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51101477A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
-
1975
- 1975-03-04 JP JP50026758A patent/JPS51101477A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51101477A (en) | 1976-09-07 |