JPS5624355A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5624355A
JPS5624355A JP10037979A JP10037979A JPS5624355A JP S5624355 A JPS5624355 A JP S5624355A JP 10037979 A JP10037979 A JP 10037979A JP 10037979 A JP10037979 A JP 10037979A JP S5624355 A JPS5624355 A JP S5624355A
Authority
JP
Japan
Prior art keywords
layer
inorganic
comes
amorphous silicon
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10037979A
Other languages
Japanese (ja)
Inventor
Akio Azuma
Kazuhiro Kawajiri
Yuzo Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP10037979A priority Critical patent/JPS5624355A/en
Publication of JPS5624355A publication Critical patent/JPS5624355A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE: To raise initial charging potential and to enhance photosensitivity and physical strength, by forming an inorganic photosensitive layer of a specified amorphous silicon, and an inorganic charge transfer layer of a specified semiconductor in contact to said layer.
CONSTITUTION: Charge blocking layer 204 of SiO2 is formed on conductive substrate 201 having conductive layer 203 on substrate 202 of glass or the like, and silicon is subjected to high frequency sputtering in a gas mixture of an inert gas or other methods to form inorganic photosensitive layer 205 of amorphous silicon on layer 204. Inorganic charge transfer layer 206 of SiC, ZnS, (GeS3)70(Sb2S3)30, or the like is formed on layer 205. As a result, layer 205 contains H, and it comes to have an average localization level state density ≤1018cm-3, and dark resistivity ≥1010Ω.cm, and layer 206 comes to have optical absorption end ≥1.5eV, thus permitting electrophotographic receptor 200 obtained to be superior in heat stability and photodecay performance of surface potential and to form a high quality image.
COPYRIGHT: (C)1981,JPO&Japio
JP10037979A 1979-08-07 1979-08-07 Electrophotographic receptor Pending JPS5624355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10037979A JPS5624355A (en) 1979-08-07 1979-08-07 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10037979A JPS5624355A (en) 1979-08-07 1979-08-07 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS5624355A true JPS5624355A (en) 1981-03-07

Family

ID=14272376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10037979A Pending JPS5624355A (en) 1979-08-07 1979-08-07 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5624355A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor
JPS57202546A (en) * 1981-06-08 1982-12-11 Semiconductor Energy Lab Co Ltd Electrostatic copier
WO1983001127A1 (en) * 1981-09-28 1983-03-31 Matsuzaki, Masatoshi Image formation method
JPS58220144A (en) * 1982-06-17 1983-12-21 Sharp Corp Electrophotographic receptor
JPH06202360A (en) * 1993-10-25 1994-07-22 Semiconductor Energy Lab Co Ltd Electrophotographic sensitive body

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor
JPS57202546A (en) * 1981-06-08 1982-12-11 Semiconductor Energy Lab Co Ltd Electrostatic copier
WO1983001127A1 (en) * 1981-09-28 1983-03-31 Matsuzaki, Masatoshi Image formation method
JPS58220144A (en) * 1982-06-17 1983-12-21 Sharp Corp Electrophotographic receptor
JPH06202360A (en) * 1993-10-25 1994-07-22 Semiconductor Energy Lab Co Ltd Electrophotographic sensitive body

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