JPS5625973A - Ion etching apparatus - Google Patents

Ion etching apparatus

Info

Publication number
JPS5625973A
JPS5625973A JP10150079A JP10150079A JPS5625973A JP S5625973 A JPS5625973 A JP S5625973A JP 10150079 A JP10150079 A JP 10150079A JP 10150079 A JP10150079 A JP 10150079A JP S5625973 A JPS5625973 A JP S5625973A
Authority
JP
Japan
Prior art keywords
sweep
axis
thin film
depth direction
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10150079A
Other languages
Japanese (ja)
Inventor
Masato Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10150079A priority Critical patent/JPS5625973A/en
Publication of JPS5625973A publication Critical patent/JPS5625973A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To measure the component of thin film in the depth direction, by providing with the sweep circuit which performs deflecting sweep of ion beam in x axis and y axis direction after generating, drawing out, accelerating and converging the ion.
CONSTITUTION: Component of thin film of semiconductor etc. in the depth direction, is known by ionizing an inactive gas and giving a shock on the surface of sample. For example, thermion is generated by the the filament 1 and introduced inactive gas is ionized and then, ionized gas is drawn out by the draw-out electrode 2. Moreover, ionized gas is accelerated by the control.grid 3 and is converged by the converging lens 4. Deflecting sweep of converged ion beam is performed in x axis and y axis by the sweep circuit 5 and sweep in y axis direction is performed based on the saw tooth signal and that of in x axis direction is performed by the functional wave signal. Hereby, section having the inclination, is exposed in the thin film 6 on the substrate 7 and component distribution in the depth direction is obtained by irradiating finely contracted incident electron and measuring gradually moving the sample stand.
COPYRIGHT: (C)1981,JPO&Japio
JP10150079A 1979-08-08 1979-08-08 Ion etching apparatus Pending JPS5625973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10150079A JPS5625973A (en) 1979-08-08 1979-08-08 Ion etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10150079A JPS5625973A (en) 1979-08-08 1979-08-08 Ion etching apparatus

Publications (1)

Publication Number Publication Date
JPS5625973A true JPS5625973A (en) 1981-03-12

Family

ID=14302342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10150079A Pending JPS5625973A (en) 1979-08-08 1979-08-08 Ion etching apparatus

Country Status (1)

Country Link
JP (1) JPS5625973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184526A (en) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol Formation of pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184526A (en) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol Formation of pattern

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