JPS562629A - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus

Info

Publication number
JPS562629A
JPS562629A JP7786979A JP7786979A JPS562629A JP S562629 A JPS562629 A JP S562629A JP 7786979 A JP7786979 A JP 7786979A JP 7786979 A JP7786979 A JP 7786979A JP S562629 A JPS562629 A JP S562629A
Authority
JP
Japan
Prior art keywords
electron beam
thin film
exposure
exhausting
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7786979A
Other languages
Japanese (ja)
Other versions
JPS5739530B2 (en
Inventor
Yasushi Wada
Norio Kuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7786979A priority Critical patent/JPS562629A/en
Publication of JPS562629A publication Critical patent/JPS562629A/en
Publication of JPS5739530B2 publication Critical patent/JPS5739530B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/301—Arrangements enabling beams to pass between regions of different pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To simplify the electron optical system and its control system in an electron beam exposure apparatus by fixing the thin film member having an opening operating also as exhausting and shaping an electron beam out of the bottom of a tube. CONSTITUTION:An electron beam 2 reaches a specimen 12 in an atmosphere through the apertures of a thin film 10. Small openings 13 are arranged in matrix state at the thin film 10, when the beam 2 is irradiated to the openings 13, a spot is exposed on a linear line, and when an X-Y base 17 is moved, an exposure field is drawn. When a specimen 12 is, for example, scanned in a direction X every time it is moved one step in a direction Y, a linear exposure is completed. When the external field exposure is conducted with the electron beam by employing the thin film aperture member operating also as exhausting and shaping the electron beam in this manner, a condenser lens can be omitted to eliminate the high accuracy in the control system, to simplify the apparatus, and reduce the cost.
JP7786979A 1979-06-20 1979-06-20 Electron beam exposure apparatus Granted JPS562629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7786979A JPS562629A (en) 1979-06-20 1979-06-20 Electron beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7786979A JPS562629A (en) 1979-06-20 1979-06-20 Electron beam exposure apparatus

Publications (2)

Publication Number Publication Date
JPS562629A true JPS562629A (en) 1981-01-12
JPS5739530B2 JPS5739530B2 (en) 1982-08-21

Family

ID=13646056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7786979A Granted JPS562629A (en) 1979-06-20 1979-06-20 Electron beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS562629A (en)

Also Published As

Publication number Publication date
JPS5739530B2 (en) 1982-08-21

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