JPS56275A - Metal film formation - Google Patents

Metal film formation

Info

Publication number
JPS56275A
JPS56275A JP7372379A JP7372379A JPS56275A JP S56275 A JPS56275 A JP S56275A JP 7372379 A JP7372379 A JP 7372379A JP 7372379 A JP7372379 A JP 7372379A JP S56275 A JPS56275 A JP S56275A
Authority
JP
Japan
Prior art keywords
sputtering
transition metal
substrate
inlet
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7372379A
Other languages
Japanese (ja)
Other versions
JPS6135270B2 (en
Inventor
Toshihiko Fukuyama
Shintaro Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7372379A priority Critical patent/JPS56275A/en
Publication of JPS56275A publication Critical patent/JPS56275A/en
Publication of JPS6135270B2 publication Critical patent/JPS6135270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To easily form a transition metal silicide layer having a desired composition with good reproducibility by sputtering on a substrate a transition metal in an inert gas atmosphere contg. slicon chloride cpd. CONSTITUTION:An Si semiconductor substrate 12 is mounted on the support plate 11 in the bell jar 14 of a sputtering apparatus. Transition metal such as W, Mo is mounted as a target 13. Chlorine cpd. such as SiH2Cl2 is admitted through an inlet 15 and an inert gas such as Ar is introduced through an inlet 16. Then, sputtering operation is performed in conventional manner. By this process, the content of Si in silicide layer on the substrate 12 can be controlled to a desired value by controlling sputtering power, and as a result, the electric properties of semiconductor elements are enhanced. The obtained layer is an important material for manufacturing highly integrated high-speed semiconductor devices.
JP7372379A 1979-06-12 1979-06-12 Metal film formation Granted JPS56275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7372379A JPS56275A (en) 1979-06-12 1979-06-12 Metal film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7372379A JPS56275A (en) 1979-06-12 1979-06-12 Metal film formation

Publications (2)

Publication Number Publication Date
JPS56275A true JPS56275A (en) 1981-01-06
JPS6135270B2 JPS6135270B2 (en) 1986-08-12

Family

ID=13526424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7372379A Granted JPS56275A (en) 1979-06-12 1979-06-12 Metal film formation

Country Status (1)

Country Link
JP (1) JPS56275A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60188693U (en) * 1984-05-25 1985-12-13 有限会社　船舶ジエツト推進研究所 ship

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040116A (en) * 1973-08-15 1975-04-12
JPS5165038A (en) * 1974-12-04 1976-06-05 Suwa Seikosha Kk TOKEI YOGA ISOBUHIN
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040116A (en) * 1973-08-15 1975-04-12
JPS5165038A (en) * 1974-12-04 1976-06-05 Suwa Seikosha Kk TOKEI YOGA ISOBUHIN
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60188693U (en) * 1984-05-25 1985-12-13 有限会社　船舶ジエツト推進研究所 ship

Also Published As

Publication number Publication date
JPS6135270B2 (en) 1986-08-12

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