JPS5637653A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5637653A
JPS5637653A JP11372979A JP11372979A JPS5637653A JP S5637653 A JPS5637653 A JP S5637653A JP 11372979 A JP11372979 A JP 11372979A JP 11372979 A JP11372979 A JP 11372979A JP S5637653 A JPS5637653 A JP S5637653A
Authority
JP
Japan
Prior art keywords
film
phosphorus
etched
insulating film
silicate glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11372979A
Other languages
Japanese (ja)
Inventor
Hideaki Takahashi
Ginjiro Kanbara
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11372979A priority Critical patent/JPS5637653A/en
Publication of JPS5637653A publication Critical patent/JPS5637653A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a wiring layer which is not etched by empolying a laminated film of phosphorus silicate galss containing a silicate glass and a phosphorus in high density as an interlayer insulating film when forming a multilayer wiring layer on an MOSIC or the like, heat treating it, thus flowing an upper layer glass and the etching to remove it. CONSTITUTION:Diffused regions 2, 3 are formed in a semiconducor substrate 1, an insulating film 1' is coated thereon, a first layer wire 4 made of polycrystalline silicon is formed between the regions 2 and 3, and a silicate glass (SiO2)5 becoming an interlayer insulating film is coated on the entire surface. Then, a phosphorus silicate glass film (P2O5-SiO2) 6 containing 15mol% of P2O4 density is formed thereon, is heated in an O2 atmosphere of 1,000 deg.C for approx. ten minutes, and the film 6 is thus flowed. Thereafter, it is dipped in a phosphoric acid solution of a density of 98% as heated to 160 deg.C, and the film 6 is etched and removed. Thus, the retained film 5 becomes a film 5' having rounded corners at the stepped port ion with smooth surface and contains no phosphorus. Accordingly, even if a second aluminum layer wire 7 is formed thereon, it is not etched.
JP11372979A 1979-09-04 1979-09-04 Manufacture of semiconductor device Pending JPS5637653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11372979A JPS5637653A (en) 1979-09-04 1979-09-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11372979A JPS5637653A (en) 1979-09-04 1979-09-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5637653A true JPS5637653A (en) 1981-04-11

Family

ID=14619650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11372979A Pending JPS5637653A (en) 1979-09-04 1979-09-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637653A (en)

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