JPS5637676A - Field effect type semiconductor switching device - Google Patents

Field effect type semiconductor switching device

Info

Publication number
JPS5637676A
JPS5637676A JP11294279A JP11294279A JPS5637676A JP S5637676 A JPS5637676 A JP S5637676A JP 11294279 A JP11294279 A JP 11294279A JP 11294279 A JP11294279 A JP 11294279A JP S5637676 A JPS5637676 A JP S5637676A
Authority
JP
Japan
Prior art keywords
regions
type
electrodes
main surface
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11294279A
Other languages
Japanese (ja)
Other versions
JPS621263B2 (en
Inventor
Susumu Murakami
Yoshio Terasawa
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11294279A priority Critical patent/JPS5637676A/en
Publication of JPS5637676A publication Critical patent/JPS5637676A/en
Publication of JPS621263B2 publication Critical patent/JPS621263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a stable bidirectional element by alternately arranging the anode and cathode regions of an FET type thyristor longitudinally and laterally on one main surface of the same semiconductor substrate, connecting them with a plurality of linear electrodes, and connecting the thyristors in anti-parallel manner. CONSTITUTION:A P type gate region 6 is diffused on one main surface 101 of N type or N<-> type semiconductor substrate 100, and N<+> type emitter regions 5 are alternately formed in lattice state together with P<+> type emitter regions 4 in a main surface 101 disposed between the regions 5 and the region 6. Then, linear first electrodes 1 are connected to the selected regions 4 and 5 of these regions, linear second electrodes 2 are connected to the regions 4 and 5 not selected in connection therewith, and gate electrodes 3 are mounted at the regions 6. Thus, the polarities of the voltages applied to the terminal T1 of the electrode 1 and to the terminal T2 of the electrode 2 are selectively controlled, and a bidirectional safe switching element having high du/dt withstand amount and forward preventive withstand voltage as well as no commutation failure can be obtained.
JP11294279A 1979-09-05 1979-09-05 Field effect type semiconductor switching device Granted JPS5637676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11294279A JPS5637676A (en) 1979-09-05 1979-09-05 Field effect type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11294279A JPS5637676A (en) 1979-09-05 1979-09-05 Field effect type semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS5637676A true JPS5637676A (en) 1981-04-11
JPS621263B2 JPS621263B2 (en) 1987-01-12

Family

ID=14599354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11294279A Granted JPS5637676A (en) 1979-09-05 1979-09-05 Field effect type semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS5637676A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136270A (en) * 1984-12-06 1986-06-24 Semiconductor Res Found Two-way light-operated switch
JPS61137365A (en) * 1984-12-08 1986-06-25 Semiconductor Res Found Light-triggered/light-quenched electrostatic induction thyristor
EP1376694A3 (en) * 2002-04-17 2006-08-23 Sanyo Electric Co., Ltd. Semiconductor switching circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136270A (en) * 1984-12-06 1986-06-24 Semiconductor Res Found Two-way light-operated switch
JPS61137365A (en) * 1984-12-08 1986-06-25 Semiconductor Res Found Light-triggered/light-quenched electrostatic induction thyristor
EP1376694A3 (en) * 2002-04-17 2006-08-23 Sanyo Electric Co., Ltd. Semiconductor switching circuit device

Also Published As

Publication number Publication date
JPS621263B2 (en) 1987-01-12

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