JPS5638008A - Display cell - Google Patents
Display cellInfo
- Publication number
- JPS5638008A JPS5638008A JP11442279A JP11442279A JPS5638008A JP S5638008 A JPS5638008 A JP S5638008A JP 11442279 A JP11442279 A JP 11442279A JP 11442279 A JP11442279 A JP 11442279A JP S5638008 A JPS5638008 A JP S5638008A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid crystal
- insulation layer
- spacer
- display cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 125000006850 spacer group Chemical group 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE: To obtain uniform gap and to increase the properties of gradation and response, by providing the spacer thicker than the driving element at the picture nondisplay part in the substrate, in the liquid crystal display cell where the semiconductor driving elements are in matrix location on the display substrate.
CONSTITUTION: In the liquid crystal display cell, where the conductor 8 is formed on the upper substrate 7 and the insulation layer 8 is formed on it, the source line 3 and the insulation layer 5 are located on the lower substrate S and the drain electrodes 4, 4'W4''' and driving thin film transistor (TFT)2 are located on the layer 5, the spacer members (SiO2, MgF2 etc.) 6, 6'W6''' are formed on the gate lines 1, 1a'W1a''' with vapor deposition by using the mask of specified pattern to keep the thickness of liquid crystal between the substrate 7 and S. Or, after forming with the same material as the insulation layer 5, the part other than the spacers 6, 6'W6''' can be excluded by etching. The spacer can be on the picture nondisplay section, not necessarily on the gate line.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11442279A JPS5638008A (en) | 1979-09-06 | 1979-09-06 | Display cell |
| US06/175,524 US4448491A (en) | 1979-08-08 | 1980-08-05 | Image display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11442279A JPS5638008A (en) | 1979-09-06 | 1979-09-06 | Display cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5638008A true JPS5638008A (en) | 1981-04-13 |
Family
ID=14637308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11442279A Pending JPS5638008A (en) | 1979-08-08 | 1979-09-06 | Display cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5638008A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852514U (en) * | 1981-10-02 | 1983-04-09 | セイコーインスツルメンツ株式会社 | display panel |
| JPS5991756U (en) * | 1982-12-13 | 1984-06-21 | 三洋電機株式会社 | lcd matrix panel |
| JPS59222817A (en) * | 1983-06-02 | 1984-12-14 | Asahi Glass Co Ltd | Liquid crystal display device |
| JPS60217343A (en) * | 1984-04-13 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Liquid crystal display device and its preparation |
| JPH0215241A (en) * | 1988-07-04 | 1990-01-18 | Stanley Electric Co Ltd | Liquid crystal display device |
| JPH04361233A (en) * | 1991-06-07 | 1992-12-14 | Nec Corp | Active matrix type liquid crystal panel and production thereof |
| FR2683631A1 (en) * | 1991-11-11 | 1993-05-14 | Fraunhofer Ges Forschung | MICROCUVETTE FOR INFRARED SPECTROSCOPY. |
| JPH08271908A (en) * | 1995-11-28 | 1996-10-18 | Canon Inc | Display panel |
| US5917572A (en) * | 1995-08-21 | 1999-06-29 | Kabushiki Kaisha Toshiba | Liquid crystal display device comprising switching elements of reverse stagger type and common electrode formed over the entire surface of the substrate including spacers that are constructed of stacked color filter layers |
| JP2013236091A (en) * | 2000-03-08 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039095A (en) * | 1973-06-28 | 1975-04-10 |
-
1979
- 1979-09-06 JP JP11442279A patent/JPS5638008A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039095A (en) * | 1973-06-28 | 1975-04-10 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852514U (en) * | 1981-10-02 | 1983-04-09 | セイコーインスツルメンツ株式会社 | display panel |
| JPS5991756U (en) * | 1982-12-13 | 1984-06-21 | 三洋電機株式会社 | lcd matrix panel |
| JPS59222817A (en) * | 1983-06-02 | 1984-12-14 | Asahi Glass Co Ltd | Liquid crystal display device |
| JPS60217343A (en) * | 1984-04-13 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Liquid crystal display device and its preparation |
| JPH0215241A (en) * | 1988-07-04 | 1990-01-18 | Stanley Electric Co Ltd | Liquid crystal display device |
| JPH04361233A (en) * | 1991-06-07 | 1992-12-14 | Nec Corp | Active matrix type liquid crystal panel and production thereof |
| FR2683631A1 (en) * | 1991-11-11 | 1993-05-14 | Fraunhofer Ges Forschung | MICROCUVETTE FOR INFRARED SPECTROSCOPY. |
| NL9201933A (en) * | 1991-11-11 | 1993-06-01 | Fraunhofer Ges Forschung | MICROCUVET FOR INFRARED SPECTROSCOPY. |
| US5917572A (en) * | 1995-08-21 | 1999-06-29 | Kabushiki Kaisha Toshiba | Liquid crystal display device comprising switching elements of reverse stagger type and common electrode formed over the entire surface of the substrate including spacers that are constructed of stacked color filter layers |
| JPH08271908A (en) * | 1995-11-28 | 1996-10-18 | Canon Inc | Display panel |
| JP2013236091A (en) * | 2000-03-08 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW376588B (en) | Thin film transistor | |
| JPS5437697A (en) | Liquid crystal display unit of matrix type | |
| EP0157489A3 (en) | Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices | |
| JPS56140321A (en) | Display device | |
| TW200519460A (en) | Liquid crystal display device and fabrication method therefor | |
| JPS54127699A (en) | Matrix-type liquid crystal display unit | |
| JPS567480A (en) | Film transistor | |
| JPS5437698A (en) | Liquid crystal display unit of matrix type | |
| JPS5672421A (en) | Liquid-crystal display panel | |
| KR940000911A (en) | LCD and Manufacturing Method | |
| JPS5790615A (en) | Phase transfer type liquid crystal display device | |
| JPS55108618A (en) | Production of image display panel | |
| JPH04180237A (en) | Thin film transistor and production method | |
| HK70189A (en) | An active matrix liquid crystal display device | |
| JPS62172758A (en) | Structure of thin film transistor | |
| JPS57115870A (en) | Insulated gate type field effect semiconductor device | |
| KR950009333A (en) | LCD and its manufacturing method | |
| KR960016638B1 (en) | Active matrix liquid crystal display and its making method | |
| JPS6473325A (en) | Manufacture of thin film field effect type transistor | |
| KR970076039A (en) | Manufacturing method of liquid crystal display device | |
| KR940022142A (en) | LCD | |
| KR960042176A (en) | Method of manufacturing thin film transistor of liquid crystal display device | |
| KR960043292A (en) | Manufacturing method of thin film transistor panel for liquid crystal display device | |
| JPS64517A (en) | Cell for sealing liquid crystal | |
| JPS61128225A (en) | Base plate of liquid crystal element |