JPS5638867B2 - - Google Patents
Info
- Publication number
- JPS5638867B2 JPS5638867B2 JP3996777A JP3996777A JPS5638867B2 JP S5638867 B2 JPS5638867 B2 JP S5638867B2 JP 3996777 A JP3996777 A JP 3996777A JP 3996777 A JP3996777 A JP 3996777A JP S5638867 B2 JPS5638867 B2 JP S5638867B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3996777A JPS53125657A (en) | 1977-04-09 | 1977-04-09 | Detecting system for completion of deicing in automatic ice machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3996777A JPS53125657A (en) | 1977-04-09 | 1977-04-09 | Detecting system for completion of deicing in automatic ice machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53125657A JPS53125657A (en) | 1978-11-02 |
| JPS5638867B2 true JPS5638867B2 (de) | 1981-09-09 |
Family
ID=12567713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3996777A Granted JPS53125657A (en) | 1977-04-09 | 1977-04-09 | Detecting system for completion of deicing in automatic ice machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53125657A (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
-
1977
- 1977-04-09 JP JP3996777A patent/JPS53125657A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7459366B2 (en) | 2001-09-07 | 2008-12-02 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53125657A (en) | 1978-11-02 |