JPS5641897A - Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film - Google Patents
Liquid-phase epitaxially-growing apparatus for oxide single crystal thin filmInfo
- Publication number
- JPS5641897A JPS5641897A JP11647179A JP11647179A JPS5641897A JP S5641897 A JPS5641897 A JP S5641897A JP 11647179 A JP11647179 A JP 11647179A JP 11647179 A JP11647179 A JP 11647179A JP S5641897 A JPS5641897 A JP S5641897A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- substrates
- single crystal
- jig
- crystal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 2
- 239000007791 liquid phase Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 239000000155 melt Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
Landscapes
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Inorganic Insulating Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make film thickness uniform and enable mass production of thin films by holding substrates at fixed positions in a melt with a position detector detecting communication between a substrate supporting jig and the melt and a means determining the crucible-substrate position on the basis of detected positions.
CONSTITUTION: When substrate supporting platinum jig 2 is lowered with raising or lowering motor 8 until the jig tip contacts with melt 7 for epitaxially growing single crystal thin films, a position detector acts to detect the set position and transfers it to timing relay 10. Relay 10 stops motor 8 on the basis of the signal. Thus, substrates 11, 12 are automatically held at optimum positions in melt 7. After the passage of a preset fixed time the substrates are pulled up from melt 7 with motor 8.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11647179A JPS5641897A (en) | 1979-09-11 | 1979-09-11 | Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11647179A JPS5641897A (en) | 1979-09-11 | 1979-09-11 | Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5641897A true JPS5641897A (en) | 1981-04-18 |
Family
ID=14687918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11647179A Pending JPS5641897A (en) | 1979-09-11 | 1979-09-11 | Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5641897A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49123500A (en) * | 1973-04-02 | 1974-11-26 | ||
| JPS549169A (en) * | 1977-06-24 | 1979-01-23 | Toshiba Corp | Method of producing single crystal |
-
1979
- 1979-09-11 JP JP11647179A patent/JPS5641897A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49123500A (en) * | 1973-04-02 | 1974-11-26 | ||
| JPS549169A (en) * | 1977-06-24 | 1979-01-23 | Toshiba Corp | Method of producing single crystal |
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