JPS564271A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS564271A
JPS564271A JP8000379A JP8000379A JPS564271A JP S564271 A JPS564271 A JP S564271A JP 8000379 A JP8000379 A JP 8000379A JP 8000379 A JP8000379 A JP 8000379A JP S564271 A JPS564271 A JP S564271A
Authority
JP
Japan
Prior art keywords
region
diode
substrate
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000379A
Other languages
Japanese (ja)
Inventor
Hiroshi Maekawa
Haruo Okawa
Kunihisa Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000379A priority Critical patent/JPS564271A/en
Publication of JPS564271A publication Critical patent/JPS564271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a diode having high withstand voltage and low loss by commonly connecting the collector and the base of a bipolar transistor to determine it as one electrode and to determine an emitter as another electrode and using it as a diode. CONSTITUTION:A P-type base region 2 is diffused in an N-type Si substrate 1 becoming a collector region, an N-type emitter region 3 is formed in the region 2, a groove 4 is perforated around the region 3 on the substrate 1, and an SiO2 film 5 is coated on the entire surface. When a bipolar transistor is formed in this manner, the impurity density of the base region 2 is set at 10<14>-10<17> pieces/cm<3>. Thereafter, an aluminum electrode 6 is commonly coated on both the substrate 1 and the region 2, an aluminum electrode 7 is independently formed on the region 3, and this transistor is used as a diode. In this manner, it has an acute rising characteristics as compared with the conventional diode and obtains high withstand voltage and low loss, that is, high efficiency in operation.
JP8000379A 1979-06-25 1979-06-25 Semiconductor device Pending JPS564271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000379A JPS564271A (en) 1979-06-25 1979-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000379A JPS564271A (en) 1979-06-25 1979-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS564271A true JPS564271A (en) 1981-01-17

Family

ID=13706152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000379A Pending JPS564271A (en) 1979-06-25 1979-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS564271A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124879A (en) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone Handotaidaioodo

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124879A (en) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone Handotaidaioodo

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