JPS564274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS564274A
JPS564274A JP8000479A JP8000479A JPS564274A JP S564274 A JPS564274 A JP S564274A JP 8000479 A JP8000479 A JP 8000479A JP 8000479 A JP8000479 A JP 8000479A JP S564274 A JPS564274 A JP S564274A
Authority
JP
Japan
Prior art keywords
substrate
coated
recesses
becoming
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000479A
Other languages
Japanese (ja)
Inventor
Yoichiro Nabeshima
Mitsuo Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000479A priority Critical patent/JPS564274A/en
Publication of JPS564274A publication Critical patent/JPS564274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide a semiconductor device which has a completely bi-directional characteristic by forming a plurality of recesses for increasing the operating area of a side surface of P-N junction on the surface of a semiconductor substrate becoming a base and forming reverse conducting emitter and collector in the respective recesses. CONSTITUTION:An oxide film is coated on a P-type Si substrate 1 becoming a base, at least two or more openings are perforated thereat, and a number of recesses 2 are perforated in the exposed substrate 1 in the openings by chemical or physical means. Then, comblike N<+>-type emitter and collector regions 3 are diffused from the wall surfaces of the recesses to the bottoms thereof to produce a P-N junction having large operating area between the region 3 and the substrate 1. Thereafter, emitter and collector electrode plates 6 and 6' are coated thereon, an oxide film 5 is coated on the exposed portion of the substrate 1, a P<+>-type layer 4 is diffused on the back surface of the substrate 1, and a base electrode layer 7 becoming a back electrode is coated thereon. In this manner, the region 3 is formed entirely symmetrical with respect to the substrate 1.
JP8000479A 1979-06-25 1979-06-25 Semiconductor device Pending JPS564274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000479A JPS564274A (en) 1979-06-25 1979-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000479A JPS564274A (en) 1979-06-25 1979-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS564274A true JPS564274A (en) 1981-01-17

Family

ID=13706180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000479A Pending JPS564274A (en) 1979-06-25 1979-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS564274A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6048782A (en) * 1983-08-27 1985-03-16 ドリ−ナ　ネ−マシ−ネン　ゲゼルシヤフト　ミト　ベシユレンクテル　ハフツング Sewing machine having stitch pattern controller
JP2013512578A (en) * 2009-12-03 2013-04-11 エプコス アクチエンゲゼルシャフト Bipolar transistor having lateral emitter and collector and manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6048782A (en) * 1983-08-27 1985-03-16 ドリ−ナ　ネ−マシ−ネン　ゲゼルシヤフト　ミト　ベシユレンクテル　ハフツング Sewing machine having stitch pattern controller
JP2013512578A (en) * 2009-12-03 2013-04-11 エプコス アクチエンゲゼルシャフト Bipolar transistor having lateral emitter and collector and manufacturing method

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