JPS5643793A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5643793A
JPS5643793A JP12029879A JP12029879A JPS5643793A JP S5643793 A JPS5643793 A JP S5643793A JP 12029879 A JP12029879 A JP 12029879A JP 12029879 A JP12029879 A JP 12029879A JP S5643793 A JPS5643793 A JP S5643793A
Authority
JP
Japan
Prior art keywords
type
layer
thick
light
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12029879A
Other languages
Japanese (ja)
Other versions
JPS625355B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12029879A priority Critical patent/JPS5643793A/en
Publication of JPS5643793A publication Critical patent/JPS5643793A/en
Publication of JPS625355B2 publication Critical patent/JPS625355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the current injection efficiency by masking the portion below a stripe-shaped electrode different in the conduction type from the substrate in an active layer and a light and carrier confining layer the same in the conduction type as the substrate. CONSTITUTION:A light confining layer 15 of an N type Al0.3Ga0.7As 0.8mum thick, a light guiding layer 13 of an N type Al0.4Ga0.9As 0.4mum thick, an active layer 14 of an N type GaAs 0.1mum thick and a light and carrier confining layer 15 of a N type Al0.3Ga0.7As 1.5mum thick are laminated on a semiconductor substrate 11 of an N type GaAs having a groove 18. A stripe-shaped P type electrode 17 is provided on the layer 15 while the parts 19 and 20 are made a P type below an electrode on the layers 14 and 15. Therefore, laser oscillation occurs in an N type region of an active layer 14 to prevent the diffusion of the carrier injected thereby improving the current injection efficiency.
JP12029879A 1979-09-18 1979-09-18 Semiconductor laser Granted JPS5643793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12029879A JPS5643793A (en) 1979-09-18 1979-09-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12029879A JPS5643793A (en) 1979-09-18 1979-09-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5643793A true JPS5643793A (en) 1981-04-22
JPS625355B2 JPS625355B2 (en) 1987-02-04

Family

ID=14782764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12029879A Granted JPS5643793A (en) 1979-09-18 1979-09-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5643793A (en)

Also Published As

Publication number Publication date
JPS625355B2 (en) 1987-02-04

Similar Documents

Publication Publication Date Title
IE35940L (en) Semiconductor injection lasers
JPS57170584A (en) Semiconductor laser device
JPS5269285A (en) Semiconductor laser device
JPS6482587A (en) Quantum well type semiconductor laser
JPS6490583A (en) Semiconductor laser element
JPS57159084A (en) Semiconductor laser element
JPS5643794A (en) Semiconductor laser
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
JPS57162382A (en) Semiconductor laser
JPS5518078A (en) Semiconductor light emission device
JPS5763885A (en) Semiconductor laser device
JPS5736887A (en) Semiconductor laser
JPS56112790A (en) Junction type semiconductor laser
JPS55166975A (en) Manufacture of semiconductor light emitting device
JPS6457693A (en) Bistable semiconductor laser
JPS5799792A (en) Semiconductor laser device
JPS57190392A (en) Semiconductor light-emitting device
JPS56112783A (en) Semiconductor laser
JPS5721884A (en) Semiconductor laser
JPS5654084A (en) Compound semiconductor laser apparatus
JPS57141987A (en) Semiconductor laser element
JPS5737892A (en) Injection type laser
JPS52106284A (en) Semiconductor laser unit
JPS53135292A (en) Structure and production of variable stripe width semiconductor laser element
JPS57198681A (en) Optical semiconductor