JPS5645892A - Manufacture of compound single crystal - Google Patents

Manufacture of compound single crystal

Info

Publication number
JPS5645892A
JPS5645892A JP12061879A JP12061879A JPS5645892A JP S5645892 A JPS5645892 A JP S5645892A JP 12061879 A JP12061879 A JP 12061879A JP 12061879 A JP12061879 A JP 12061879A JP S5645892 A JPS5645892 A JP S5645892A
Authority
JP
Japan
Prior art keywords
liq
diameter
crystal
single crystal
buoyancy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12061879A
Other languages
Japanese (ja)
Inventor
Yoshihiro Kokubu
Shoichi Washitsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12061879A priority Critical patent/JPS5645892A/en
Publication of JPS5645892A publication Critical patent/JPS5645892A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture a compound single crystal with high crystallizability and a slight diameter change by a liq. capsule pulling method by correcting the influence of buoyancy with a liq. capsule in automatic diameter control by a weight method.
CONSTITUTION: The weight of a high decomposition pressure compound single crystal pulled up with liq. capsule pulling device 1 is detected with weight detector 2, and the signal from detector 2 is differentiated with differentiator 3. This value and a buoyancy correcting signal from buoyancy collector 4 with a liq. capcule are inputted into automatic diameter controller 5 to control the diameter of the pulled crystal to a desired value. Thus, accuracy in the diameter of the pulled crystal can be enhanced, and a strain in the crystal can be reduced.
COPYRIGHT: (C)1981,JPO&Japio
JP12061879A 1979-09-21 1979-09-21 Manufacture of compound single crystal Pending JPS5645892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12061879A JPS5645892A (en) 1979-09-21 1979-09-21 Manufacture of compound single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12061879A JPS5645892A (en) 1979-09-21 1979-09-21 Manufacture of compound single crystal

Publications (1)

Publication Number Publication Date
JPS5645892A true JPS5645892A (en) 1981-04-25

Family

ID=14790692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12061879A Pending JPS5645892A (en) 1979-09-21 1979-09-21 Manufacture of compound single crystal

Country Status (1)

Country Link
JP (1) JPS5645892A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
JPS6374996A (en) * 1986-09-19 1988-04-05 Nippon Mining Co Ltd Production of compound semiconductor single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
JPS6374996A (en) * 1986-09-19 1988-04-05 Nippon Mining Co Ltd Production of compound semiconductor single crystal

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