JPS5646563A - Static induction transistor - Google Patents

Static induction transistor

Info

Publication number
JPS5646563A
JPS5646563A JP12352579A JP12352579A JPS5646563A JP S5646563 A JPS5646563 A JP S5646563A JP 12352579 A JP12352579 A JP 12352579A JP 12352579 A JP12352579 A JP 12352579A JP S5646563 A JPS5646563 A JP S5646563A
Authority
JP
Japan
Prior art keywords
electrode
gate
source
source electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12352579A
Other languages
Japanese (ja)
Inventor
Tsuneo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP12352579A priority Critical patent/JPS5646563A/en
Publication of JPS5646563A publication Critical patent/JPS5646563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable an intersection of an aluminum wire and a wire of a source electrode for a static induction transistor SIT by forming the gate of the SIT only with an alloying treatment without a thermal diffusion step. CONSTITUTION:An n<-> type channel 13 is epitaxially grown on an n<+> type drain 12, holes are opened at an SiO2 film 16, a source electrode 17 of polysilicon containing P in high density is provided in the hole, and is treated at high temperature, and an n<+> type source 15 is formed. The electrode 17 is covered with an oxide film 18, an aluminum electrode 19 is formed thereon, is heat treated, and aluminum is diffused in the substrate, and a p type gate 14 is formed thereon. According to this configuration a special diffusing step is unnecessary to form the gate 14 and the source 15. Since the film 18 is formed further on the source electrode 17, a gate electrode 19 can be superimposed on the source electrode 17, and can also be readily positioned.
JP12352579A 1979-09-26 1979-09-26 Static induction transistor Pending JPS5646563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12352579A JPS5646563A (en) 1979-09-26 1979-09-26 Static induction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12352579A JPS5646563A (en) 1979-09-26 1979-09-26 Static induction transistor

Publications (1)

Publication Number Publication Date
JPS5646563A true JPS5646563A (en) 1981-04-27

Family

ID=14862760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12352579A Pending JPS5646563A (en) 1979-09-26 1979-09-26 Static induction transistor

Country Status (1)

Country Link
JP (1) JPS5646563A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500434A (en) * 1982-03-16 1984-03-15 バロース　コーポレーション Molded optical waveguide switching device
JPS6015977A (en) * 1983-07-06 1985-01-26 Matsushita Electric Ind Co Ltd Method of manufacturing field effect transistor
US5153695A (en) * 1986-04-30 1992-10-06 Bbc Brown, Boveri Ag Semiconductor gate-controlled high-power capability bipolar device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500434A (en) * 1982-03-16 1984-03-15 バロース　コーポレーション Molded optical waveguide switching device
JPS6015977A (en) * 1983-07-06 1985-01-26 Matsushita Electric Ind Co Ltd Method of manufacturing field effect transistor
US5153695A (en) * 1986-04-30 1992-10-06 Bbc Brown, Boveri Ag Semiconductor gate-controlled high-power capability bipolar device

Similar Documents

Publication Publication Date Title
JPS55160457A (en) Semiconductor device
JPS5646563A (en) Static induction transistor
JPS5633881A (en) Manufacture of semiconductor device
JPS57111066A (en) Semiconuctor device
JPS5626470A (en) Field-effect transistor manufacturing process
JPS54111792A (en) Semiconductor device and its manufacture
JPS55140262A (en) Semiconductor device
JPS57141966A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5618419A (en) Manufacture of semiconductor device
JPS57121278A (en) Manufacture of mos type transistor
JPS5784178A (en) Field-effect transistor
JPS55113376A (en) Manufacturing method of semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS54144182A (en) Semiconductor device
JPS6461059A (en) Semiconductor device
JPS561572A (en) Manufacture of semiconductor device
JPS5451485A (en) Semiconductor device
JPS5681969A (en) Manufacture of semiconductor device
JPS5498581A (en) Manufacture of field effect transistor
JPS5612777A (en) Vertical type field effect semiconductor device and manufacture therefor
JPS55130169A (en) Method of fabricating semiconductor device
JPS5546584A (en) Complementary insulated gate field effect semiconductor device and method of fabricating the same
JPS5678157A (en) Semiconductor device
JPS5687362A (en) Manufacture of semiconductor device