JPS5648176A - Junction field-effect transistor - Google Patents

Junction field-effect transistor

Info

Publication number
JPS5648176A
JPS5648176A JP12357079A JP12357079A JPS5648176A JP S5648176 A JPS5648176 A JP S5648176A JP 12357079 A JP12357079 A JP 12357079A JP 12357079 A JP12357079 A JP 12357079A JP S5648176 A JPS5648176 A JP S5648176A
Authority
JP
Japan
Prior art keywords
region
island
fet
type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12357079A
Other languages
Japanese (ja)
Inventor
Shuji Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12357079A priority Critical patent/JPS5648176A/en
Publication of JPS5648176A publication Critical patent/JPS5648176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an FET of low input capacitance by separating a semiconduc- tor layer into two island regions, providing a J-FET in one island region, and a diffusion region in the other island region, connecting it with the source region of the FET and extending a drain electrode onto the other island region. CONSTITUTION:On a P type semiconductor substrate 10, an N type layer 20 is epitaxially grown and the layer 20 is separated into two island regions by two P type substrate take-out regions 30 entering into the substrate 10: in one island region, a P type gate region 40, an N<+> type drain region 50 and a source region 60 are made, and thus a J-FET is formed: in the other island region, only an N<+> type region 60' is diffusion formed. Next, an insulating oxide film 90 is formed over the entire surface, windows, are opened, an electrode 80' formed on the region 60' is connected with a source electrode 80 coated on the region 60, a drain electrode 70 formed on the region 50 is extended onto the film 90 approaching the electrode 80', and here provided a pad 70'. By so doing, a low input capacitance J-FET can be obtained without lowering mutual conductance and inversed voltage.
JP12357079A 1979-09-26 1979-09-26 Junction field-effect transistor Pending JPS5648176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12357079A JPS5648176A (en) 1979-09-26 1979-09-26 Junction field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12357079A JPS5648176A (en) 1979-09-26 1979-09-26 Junction field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5648176A true JPS5648176A (en) 1981-05-01

Family

ID=14863843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12357079A Pending JPS5648176A (en) 1979-09-26 1979-09-26 Junction field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5648176A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62243359A (en) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd Compound semiconductor device
JPS6334415U (en) * 1986-08-25 1988-03-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62243359A (en) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd Compound semiconductor device
JPS6334415U (en) * 1986-08-25 1988-03-05

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