JPS56500097A - - Google Patents
Info
- Publication number
- JPS56500097A JPS56500097A JP50069080A JP50069080A JPS56500097A JP S56500097 A JPS56500097 A JP S56500097A JP 50069080 A JP50069080 A JP 50069080A JP 50069080 A JP50069080 A JP 50069080A JP S56500097 A JPS56500097 A JP S56500097A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/019,711 US4232110A (en) | 1979-03-12 | 1979-03-12 | Solid state devices formed by differential plasma etching of resists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56500097A true JPS56500097A (ja) | 1981-01-29 |
Family
ID=21794629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50069080A Pending JPS56500097A (ja) | 1979-03-12 | 1980-02-28 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4232110A (ja) |
| EP (1) | EP0017032B1 (ja) |
| JP (1) | JPS56500097A (ja) |
| CA (1) | CA1134953A (ja) |
| DE (1) | DE3066537D1 (ja) |
| ES (1) | ES8103476A1 (ja) |
| WO (1) | WO1980001978A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08240913A (ja) * | 1994-10-12 | 1996-09-17 | Hyundai Electron Ind Co Ltd | 感光膜パターン形成方法 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345021A (en) * | 1979-09-25 | 1982-08-17 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element and process for fabricating the same |
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
| JPS57157523A (en) * | 1981-03-25 | 1982-09-29 | Hitachi Ltd | Forming method for pattern |
| US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
| US4500628A (en) * | 1981-04-22 | 1985-02-19 | At&T Bell Laboratories | Process of making solid state devices using silicon containing organometallic plasma developed resists |
| JPS57202534A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Negative type resist composition |
| JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
| US4400235A (en) * | 1982-03-25 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Etching apparatus and method |
| DE3377597D1 (en) * | 1982-04-12 | 1988-09-08 | Nippon Telegraph & Telephone | Method for forming micropattern |
| US4665541A (en) * | 1983-06-06 | 1987-05-12 | The University Of Rochester | X-ray lithography |
| US5215867A (en) * | 1983-09-16 | 1993-06-01 | At&T Bell Laboratories | Method with gas functionalized plasma developed layer |
| US4596761A (en) * | 1983-11-02 | 1986-06-24 | Hughes Aircraft Company | Graft polymerized SiO2 lithographic masks |
| JPS60501777A (ja) * | 1983-11-02 | 1985-10-17 | ヒユ−ズ・エアクラフト・カンパニ− | 二酸化ケイ素系グラフト重合リソグラフマスク |
| GB8427149D0 (en) * | 1984-10-26 | 1984-12-05 | Ucb Sa | Resist materials |
| USH102H (en) | 1984-11-09 | 1986-08-05 | At&T Bell Laboratories | Controlling resolution of exposed resist in device lithography |
| CA1267378A (en) * | 1984-12-07 | 1990-04-03 | Jer-Ming Yang | Top imaged and organosilicon treated polymer layer developable with plasma |
| US4751170A (en) * | 1985-07-26 | 1988-06-14 | Nippon Telegraph And Telephone Corporation | Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method |
| US5094936A (en) * | 1988-09-16 | 1992-03-10 | Texas Instruments Incorporated | High pressure photoresist silylation process and apparatus |
| US7742672B2 (en) * | 2005-08-24 | 2010-06-22 | General Electric Company | Composition, optical device article, and associated method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE560986A (ja) * | 1956-09-21 | |||
| US3816198A (en) * | 1969-09-22 | 1974-06-11 | G Babcock | Selective plasma etching of organic materials employing photolithographic techniques |
| US3871885A (en) * | 1971-05-18 | 1975-03-18 | Du Pont | Crystalline photo-polymerizable composition |
| US3816196A (en) * | 1971-06-07 | 1974-06-11 | Gen Electric | Passivation of photoresist materials used in selective plasma etching |
| US3809732A (en) * | 1972-12-18 | 1974-05-07 | Bell Telephone Labor Inc | Photo-locking technique for producing integrated optical circuits |
| US3916035A (en) * | 1973-11-05 | 1975-10-28 | Texas Instruments Inc | Epoxy-polymer electron beam resists |
| US3953620A (en) * | 1974-12-06 | 1976-04-27 | Bell Telephone Laboratories, Incorporated | Producing integrated optical circuits |
| DE2726813C2 (de) | 1976-06-17 | 1984-02-23 | Motorola, Inc., 60196 Schaumburg, Ill. | Verfahren zur Herstellung eines mit einem Muster versehenen Substrats |
| FR2389922B1 (ja) * | 1977-05-03 | 1981-08-28 | Thomson Csf |
-
1979
- 1979-03-12 US US06/019,711 patent/US4232110A/en not_active Expired - Lifetime
-
1980
- 1980-02-28 WO PCT/US1980/000200 patent/WO1980001978A1/en not_active Ceased
- 1980-02-28 JP JP50069080A patent/JPS56500097A/ja active Pending
- 1980-03-11 CA CA000347419A patent/CA1134953A/en not_active Expired
- 1980-03-11 ES ES489416A patent/ES8103476A1/es not_active Expired
- 1980-03-12 DE DE8080101269T patent/DE3066537D1/de not_active Expired
- 1980-03-12 EP EP80101269A patent/EP0017032B1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08240913A (ja) * | 1994-10-12 | 1996-09-17 | Hyundai Electron Ind Co Ltd | 感光膜パターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| ES489416A0 (es) | 1981-02-16 |
| WO1980001978A1 (en) | 1980-09-18 |
| EP0017032B1 (en) | 1984-02-15 |
| CA1134953A (en) | 1982-11-02 |
| EP0017032A2 (en) | 1980-10-15 |
| ES8103476A1 (es) | 1981-02-16 |
| US4232110A (en) | 1980-11-04 |
| EP0017032A3 (en) | 1981-07-15 |
| DE3066537D1 (en) | 1984-03-22 |