JPS5650036A - Target of image pick-up tube - Google Patents
Target of image pick-up tubeInfo
- Publication number
- JPS5650036A JPS5650036A JP12590279A JP12590279A JPS5650036A JP S5650036 A JPS5650036 A JP S5650036A JP 12590279 A JP12590279 A JP 12590279A JP 12590279 A JP12590279 A JP 12590279A JP S5650036 A JPS5650036 A JP S5650036A
- Authority
- JP
- Japan
- Prior art keywords
- onto
- electrode
- photoconductive film
- impurities
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
PURPOSE:To facilitate manufacture of a target and improve sensitivity and residual image characteristic by coating the photoconductive film consisting of noncrystalline silicon layer in which the impurities for increasing energy band gap are doped, onto a light transmitting electrode and varying the width of gap in the direction of thickness. CONSTITUTION:Onto the inner surface of a light transmitting substratum, for example of a glass face plate 3, a transparent electrode 8 is coated, and onto the electrode 8, the noncrystalline silicon layer having high specific resistance as a photoconductive film 9 is deposited. Onto this photoconductive film 8, an electron beam landing layer 10 is deposited. In the noncrystalline silicon layer as the photoconductive film 9, the impurities which increases the band gap of silicon, such as N, O, C, and H are doped, and the concentration of the impurities is increased toward the transparent electrode 8 side gradually, and the width of band gap is increased gradually toward the electrode 8 side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12590279A JPS5650036A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12590279A JPS5650036A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5650036A true JPS5650036A (en) | 1981-05-07 |
Family
ID=14921727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12590279A Pending JPS5650036A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650036A (en) |
-
1979
- 1979-09-28 JP JP12590279A patent/JPS5650036A/en active Pending
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