JPS56501390A - - Google Patents

Info

Publication number
JPS56501390A
JPS56501390A JP50006080A JP50006080A JPS56501390A JP S56501390 A JPS56501390 A JP S56501390A JP 50006080 A JP50006080 A JP 50006080A JP 50006080 A JP50006080 A JP 50006080A JP S56501390 A JPS56501390 A JP S56501390A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50006080A
Other versions
JPS641071B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56501390A publication Critical patent/JPS56501390A/ja
Publication of JPS641071B2 publication Critical patent/JPS641071B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
JP56500060A 1979-10-29 1980-10-09 Expired JPS641071B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/089,036 US4305048A (en) 1979-10-29 1979-10-29 Mode stabilized semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56501390A true JPS56501390A (ja) 1981-09-24
JPS641071B2 JPS641071B2 (ja) 1989-01-10

Family

ID=22215186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56500060A Expired JPS641071B2 (ja) 1979-10-29 1980-10-09

Country Status (5)

Country Link
US (1) US4305048A (ja)
EP (1) EP0039722B1 (ja)
JP (1) JPS641071B2 (ja)
DE (1) DE3068231D1 (ja)
WO (1) WO1981001221A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439782A (en) * 1980-11-21 1984-03-27 University Of Illinois Foundation Semiconductor device with heterojunction of Alx Ga1-x As--AlAs--Ga
US4446557A (en) * 1981-11-06 1984-05-01 Hughes Aircraft Company Mode-locked semiconductor laser with tunable external cavity
DE3914001A1 (de) * 1989-04-27 1990-10-31 Siemens Ag Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung
DE102012018207A1 (de) 2012-09-14 2014-03-20 Oxea Gmbh Verfahren zur Herstelluna von Polyolestern

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654497A (en) * 1969-12-01 1972-04-04 Bell Telephone Labor Inc Semiconductor lasers utilizing internal saturable absorbers
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
US4055815A (en) * 1975-12-24 1977-10-25 International Business Machines Q-switching injection laser with oxygen implanted region
US4132960A (en) * 1977-03-28 1979-01-02 Xerox Corporation Single longitudinal mode gaas/gaalas double heterostructure laser
US4158207A (en) * 1978-03-27 1979-06-12 The United States Of America As Represented By The Secretary Of The Navy Iron-doped indium phosphide semiconductor laser

Also Published As

Publication number Publication date
EP0039722A4 (en) 1982-04-22
US4305048A (en) 1981-12-08
EP0039722B1 (en) 1984-06-13
DE3068231D1 (en) 1984-07-19
EP0039722A1 (en) 1981-11-18
JPS641071B2 (ja) 1989-01-10
WO1981001221A1 (en) 1981-04-30

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