JPS5651093A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5651093A
JPS5651093A JP12495779A JP12495779A JPS5651093A JP S5651093 A JPS5651093 A JP S5651093A JP 12495779 A JP12495779 A JP 12495779A JP 12495779 A JP12495779 A JP 12495779A JP S5651093 A JPS5651093 A JP S5651093A
Authority
JP
Japan
Prior art keywords
write
information
storage device
semiconductor storage
cycles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12495779A
Other languages
Japanese (ja)
Inventor
Masazumi Ikebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12495779A priority Critical patent/JPS5651093A/en
Publication of JPS5651093A publication Critical patent/JPS5651093A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To reduce the number of write-in cycles and to decrease the write-in time, by storing the write-in data in the storage circuit to perform simultaneous write-in of a plurality of words. CONSTITUTION:The write-in information via an I/O section 15 is stored also in a pre-storage circuit 16, and the write-in information to cell blocks 2-1, 1-2 is stored in the I/O section 15 and the circuit 16. The write-in information is simultaneously written in the same address cells C12, C22 of blocks 2-1, 1-2 via transistors W1, W2. Further, the readout is made one by one word with any of transistors Q1, Q2. Accordingly, a number of pre-storage circuits are provided, then simultaneous write-in of a plurality of words can be made, allowing to reduce the number of write-in cycles and to decrease the entire write-in time.
JP12495779A 1979-09-28 1979-09-28 Semiconductor storage device Pending JPS5651093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12495779A JPS5651093A (en) 1979-09-28 1979-09-28 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12495779A JPS5651093A (en) 1979-09-28 1979-09-28 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5651093A true JPS5651093A (en) 1981-05-08

Family

ID=14898395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12495779A Pending JPS5651093A (en) 1979-09-28 1979-09-28 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5651093A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117184A (en) * 1981-01-13 1982-07-21 Citizen Watch Co Ltd Non-volatile memory circuit for portable electronic device
JPS5881798U (en) * 1981-11-25 1983-06-02 日本電気株式会社 PROM writer
US4394748A (en) * 1981-08-18 1983-07-19 Motorola, Inc. ROM Column select circuit and sense amplifier
JPS5956297A (en) * 1982-09-27 1984-03-31 Fujitsu Ltd Writing method of prom device
JPS6040596A (en) * 1983-07-14 1985-03-02 ハネウエル・インコ−ポレ−テツド Electronic device
JPS6167107U (en) * 1984-10-11 1986-05-08
US4744061A (en) * 1983-11-25 1988-05-10 Fujitsu Limited Dynamic semiconductor memory device having a simultaneous test function for divided memory cell blocks
JPH02201798A (en) * 1989-01-31 1990-08-09 Fujitsu Ltd Semiconductor storage device
US4984212A (en) * 1984-09-26 1991-01-08 Hitachi, Ltd. Semiconductor memory
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
US6438068B1 (en) * 2000-06-30 2002-08-20 Micron Technology, Inc. Active terminate command in synchronous flash memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107043A (en) * 1975-03-17 1976-09-22 Tokyo Shibaura Electric Co Saikakikaekanona yomidashisenyomemorino kakikomisochi
JPS52130536A (en) * 1976-04-26 1977-11-01 Toshiba Corp Semiconductor memory unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107043A (en) * 1975-03-17 1976-09-22 Tokyo Shibaura Electric Co Saikakikaekanona yomidashisenyomemorino kakikomisochi
JPS52130536A (en) * 1976-04-26 1977-11-01 Toshiba Corp Semiconductor memory unit

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117184A (en) * 1981-01-13 1982-07-21 Citizen Watch Co Ltd Non-volatile memory circuit for portable electronic device
US4394748A (en) * 1981-08-18 1983-07-19 Motorola, Inc. ROM Column select circuit and sense amplifier
JPS5881798U (en) * 1981-11-25 1983-06-02 日本電気株式会社 PROM writer
JPS5956297A (en) * 1982-09-27 1984-03-31 Fujitsu Ltd Writing method of prom device
JPS6040596A (en) * 1983-07-14 1985-03-02 ハネウエル・インコ−ポレ−テツド Electronic device
US4744061A (en) * 1983-11-25 1988-05-10 Fujitsu Limited Dynamic semiconductor memory device having a simultaneous test function for divided memory cell blocks
US4984212A (en) * 1984-09-26 1991-01-08 Hitachi, Ltd. Semiconductor memory
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
JPS6167107U (en) * 1984-10-11 1986-05-08
JPH02201798A (en) * 1989-01-31 1990-08-09 Fujitsu Ltd Semiconductor storage device
US6438068B1 (en) * 2000-06-30 2002-08-20 Micron Technology, Inc. Active terminate command in synchronous flash memory

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