JPS5651864A - Semiconductor switching element - Google Patents

Semiconductor switching element

Info

Publication number
JPS5651864A
JPS5651864A JP12767279A JP12767279A JPS5651864A JP S5651864 A JPS5651864 A JP S5651864A JP 12767279 A JP12767279 A JP 12767279A JP 12767279 A JP12767279 A JP 12767279A JP S5651864 A JPS5651864 A JP S5651864A
Authority
JP
Japan
Prior art keywords
type
layer
substrate
gate
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12767279A
Other languages
Japanese (ja)
Other versions
JPS6148788B2 (en
Inventor
Akira Aso
Koji Hayashi
Kazunobu Shozen
Toshibumi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12767279A priority Critical patent/JPS5651864A/en
Publication of JPS5651864A publication Critical patent/JPS5651864A/en
Publication of JPS6148788B2 publication Critical patent/JPS6148788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To obtain the switching element capable of compensating the low breakdown voltage and having a breakdown voltage equal to that of SCR of a substrate by incorporating a diffused resistor into a semiconductor substrate in one body and selecting the diffused position. CONSTITUTION:Side wall of an element is provided with an N type substrate 1 equipped with separate diffusion 2 of P type impurity. A P type anode layer 3 is attached onto the reverse side and an annular P type gate layer 4 is formed on the surface, and a P type diffused resistor 5 is formed in a region 1a caught between the gate layers. As the resistor layer 5 is surrounded by a depletion layer stretching around the gate layer 4 at the time of its operation, it is possible to obtain a sufficiently high breakdown voltage almost equal to that of SCR or the substrate. And then, an N type cathode layer 6 and an N type protective ring 7 are provided, a window 11 for the gate is provided on an insulation film 8, and a window 8 for the resistor is provided on the gate layer in a position capable of obtaining the required resistance value from the terminal connected in the substrate, and then, the windows 10 and 8 are connected with each other by an Al electrode 9. It is possible, by using this constitution, to obtain the switching element of high capability.
JP12767279A 1979-10-02 1979-10-02 Semiconductor switching element Granted JPS5651864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12767279A JPS5651864A (en) 1979-10-02 1979-10-02 Semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12767279A JPS5651864A (en) 1979-10-02 1979-10-02 Semiconductor switching element

Publications (2)

Publication Number Publication Date
JPS5651864A true JPS5651864A (en) 1981-05-09
JPS6148788B2 JPS6148788B2 (en) 1986-10-25

Family

ID=14965856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12767279A Granted JPS5651864A (en) 1979-10-02 1979-10-02 Semiconductor switching element

Country Status (1)

Country Link
JP (1) JPS5651864A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629726A (en) * 1985-07-09 1987-01-17 Teisan Diecast Kogyo Kk Punching and forming method for ring plate-shaped casting
JPS6442559A (en) * 1987-08-07 1989-02-14 Ube Industries Heat treatment of aluminum alloy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629726A (en) * 1985-07-09 1987-01-17 Teisan Diecast Kogyo Kk Punching and forming method for ring plate-shaped casting
JPS6442559A (en) * 1987-08-07 1989-02-14 Ube Industries Heat treatment of aluminum alloy

Also Published As

Publication number Publication date
JPS6148788B2 (en) 1986-10-25

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