JPS565357A - Formation of transparent conductive film - Google Patents

Formation of transparent conductive film

Info

Publication number
JPS565357A
JPS565357A JP7821679A JP7821679A JPS565357A JP S565357 A JPS565357 A JP S565357A JP 7821679 A JP7821679 A JP 7821679A JP 7821679 A JP7821679 A JP 7821679A JP S565357 A JPS565357 A JP S565357A
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
base plate
formula
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7821679A
Other languages
Japanese (ja)
Other versions
JPS5854090B2 (en
Inventor
Ryoichi Sudo
Masaaki Okunaka
Ataru Yokono
Tokio Isogai
Mitsuo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP7821679A priority Critical patent/JPS5854090B2/en
Publication of JPS565357A publication Critical patent/JPS565357A/en
Publication of JPS5854090B2 publication Critical patent/JPS5854090B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Paints Or Removers (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE: To obtain a transparent conductive film having excellent transparency and excellent conductivity by coating a liquid composition composed primarily of specific proportions of an inorganic indium salt and a hydroxylic acid on a base plate and then heating the coat.
CONSTITUTION: A 1:0.1W2.9 (molar ratio) mixture of an inorganic indium salt, e.g., one of chlorides, nitrates, and perchlorates, and a hydroxy acid containing one or more each of carboxyl group and hydroxyl group in the same molecule, e.g., glycolic acid, or containing intramolecular ester of the formula I or intermolecular ester of the formula II, e.g., glycollide, is dissolved in an solvent, e.g., propanol, coated on a base plate, dried, and then heated at 400W900°C for 15W180min, for example. In this case, an organic or inorganic compound containing tin or antimony element or ethyl cellulose may be added. Thus, a transparent and conductive film which is excellent in transparency and conductivity can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP7821679A 1979-06-22 1979-06-22 Method for forming transparent conductive film Expired JPS5854090B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7821679A JPS5854090B2 (en) 1979-06-22 1979-06-22 Method for forming transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7821679A JPS5854090B2 (en) 1979-06-22 1979-06-22 Method for forming transparent conductive film

Publications (2)

Publication Number Publication Date
JPS565357A true JPS565357A (en) 1981-01-20
JPS5854090B2 JPS5854090B2 (en) 1983-12-02

Family

ID=13655845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7821679A Expired JPS5854090B2 (en) 1979-06-22 1979-06-22 Method for forming transparent conductive film

Country Status (1)

Country Link
JP (1) JPS5854090B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110347A (en) * 1997-10-15 2000-08-29 Canon Kabushiki Kashia Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate
AU747912B2 (en) * 1997-10-15 2002-05-30 Canon Kabushiki Kaisha A method for the formation of an indium oxide film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110347A (en) * 1997-10-15 2000-08-29 Canon Kabushiki Kashia Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate
AU747912B2 (en) * 1997-10-15 2002-05-30 Canon Kabushiki Kaisha A method for the formation of an indium oxide film
US6464762B1 (en) * 1997-10-15 2002-10-15 Canon Kabushiki Kaisha Aqueous solution for the formation of an indium oxide film by electroless deposition

Also Published As

Publication number Publication date
JPS5854090B2 (en) 1983-12-02

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