JPS5655082A - Photocoupling type semiconductor switch - Google Patents

Photocoupling type semiconductor switch

Info

Publication number
JPS5655082A
JPS5655082A JP13074879A JP13074879A JPS5655082A JP S5655082 A JPS5655082 A JP S5655082A JP 13074879 A JP13074879 A JP 13074879A JP 13074879 A JP13074879 A JP 13074879A JP S5655082 A JPS5655082 A JP S5655082A
Authority
JP
Japan
Prior art keywords
region
junction
type semiconductor
pnpn
photocoupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13074879A
Other languages
Japanese (ja)
Other versions
JPS5729865B2 (en
Inventor
Haruo Mori
Kazuo Hagimura
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13074879A priority Critical patent/JPS5655082A/en
Publication of JPS5655082A publication Critical patent/JPS5655082A/en
Publication of JPS5729865B2 publication Critical patent/JPS5729865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Thyristors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To contrive the simplification of a step of forming a photocoupling type semiconductor switch by integrating a PNPN element, transistor, diode and resistor regions with the light emitting element on a semiconductor substrate and isolating the respective element regions with a P-N junction, thereby improving the dv/dt characteristics. CONSTITUTION:The P type gate region 15(16) and anode region 17 of a light receiving PNPN element 6(7) corresponding to a gate input light emitting element 3 are diffused on an N type semiconductor substrate 18, and a cathode region 23 is diffused in the P type gate region 15(16). Then, the same conductivity type gate and cathode resistors 8, 9 are formed as its extension in the region 15(16). Transistors 11, 12 connected to the diodes 13, 14 are in lateral structure, the isolation between the elements is conducted with P-N junction, and the collector and emitter are connected in parallel with the resistors 8, 9 respectively. Since the respective element regions are isolated with P-N junction, it can improve the dv/dt withstand characteristics intrinsic for the PNPN structure and can simplify the step of fabricating the switch.
JP13074879A 1979-10-12 1979-10-12 Photocoupling type semiconductor switch Granted JPS5655082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13074879A JPS5655082A (en) 1979-10-12 1979-10-12 Photocoupling type semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13074879A JPS5655082A (en) 1979-10-12 1979-10-12 Photocoupling type semiconductor switch

Publications (2)

Publication Number Publication Date
JPS5655082A true JPS5655082A (en) 1981-05-15
JPS5729865B2 JPS5729865B2 (en) 1982-06-25

Family

ID=15041686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13074879A Granted JPS5655082A (en) 1979-10-12 1979-10-12 Photocoupling type semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5655082A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831586A (en) * 1981-08-19 1983-02-24 Nippon Telegr & Teleph Corp <Ntt> Mounting method for photocoupler
JPH07122729A (en) * 1993-10-25 1995-05-12 Nec Corp Photothyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831586A (en) * 1981-08-19 1983-02-24 Nippon Telegr & Teleph Corp <Ntt> Mounting method for photocoupler
JPH07122729A (en) * 1993-10-25 1995-05-12 Nec Corp Photothyristor

Also Published As

Publication number Publication date
JPS5729865B2 (en) 1982-06-25

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