JPS5658242A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5658242A
JPS5658242A JP13384979A JP13384979A JPS5658242A JP S5658242 A JPS5658242 A JP S5658242A JP 13384979 A JP13384979 A JP 13384979A JP 13384979 A JP13384979 A JP 13384979A JP S5658242 A JPS5658242 A JP S5658242A
Authority
JP
Japan
Prior art keywords
isolation
perfect
chip
element isolation
imperfect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13384979A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13384979A priority Critical patent/JPS5658242A/en
Publication of JPS5658242A publication Critical patent/JPS5658242A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To exclude an imperfect isolation and to improve the yield by a method wherein an element isolation region around a diffusion monitor is formed in the state that the minimum width of the element isolation region contains within an IC chip is at least partially included, and the element isolation is inspected between monitors. CONSTITUTION:The thickness of the diffusion layer depends upon the surface width, when the width is narrow it will be shallow even in a same condition. Although it is judged the isolation is perfect in the broad element isolation region, the case imperfect operation will occur in the IC. Then, the isolation region is provided in the same size as the minimum element separation region in the IC chip 10 at both side of a scribe line 12, the possibility of the isolation is detected between diffusion monitors 11, 11' by a probe. If the isolation is perfect it may be regarded as the isolation in the chip is also perfect. Thus the imperfect element isolation is entirely excluded, the reliability is enhanced.
JP13384979A 1979-10-17 1979-10-17 Manufacture of semiconductor integrated circuit Pending JPS5658242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13384979A JPS5658242A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13384979A JPS5658242A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5658242A true JPS5658242A (en) 1981-05-21

Family

ID=15114462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13384979A Pending JPS5658242A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5658242A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430548A (en) * 1990-05-28 1992-02-03 Fujitsu Ltd Semiconductor device, and test method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142479A (en) * 1974-10-08 1976-04-10 Nippon Electric Co
JPS52101979A (en) * 1976-02-23 1977-08-26 Agency Of Ind Science & Technol Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142479A (en) * 1974-10-08 1976-04-10 Nippon Electric Co
JPS52101979A (en) * 1976-02-23 1977-08-26 Agency Of Ind Science & Technol Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430548A (en) * 1990-05-28 1992-02-03 Fujitsu Ltd Semiconductor device, and test method

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