JPS5659691A - Single crystal growing method - Google Patents
Single crystal growing methodInfo
- Publication number
- JPS5659691A JPS5659691A JP12464979A JP12464979A JPS5659691A JP S5659691 A JPS5659691 A JP S5659691A JP 12464979 A JP12464979 A JP 12464979A JP 12464979 A JP12464979 A JP 12464979A JP S5659691 A JPS5659691 A JP S5659691A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- rod
- crystal
- grown
- boride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 11
- 238000000034 method Methods 0.000 title abstract 3
- 230000010355 oscillation Effects 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow a boride single crystal with large diameter not available hitherto by a conventional method by leaving a predetermined space between a crystal rod and a high frequency coil and carrying out operation with specified oscillation frequency when boride having CaB6 type crystal structure is grown to a single crystal by a floating zone melting method.
CONSTITUTION: When boride having CaB6 type crystal structure is grown to a single crystal by a floating zone melting method applying high frequency induction heating, 0.1W1mm space is left between a sintered rod or a single crystal rod as a vertically held starting material rod and a high frequency coil placed outside the rod, and operation is carried out with ≥1 MHz oscillation frequency. Thus, a single crystal of ≥about 10mm large diameter usable as a high luminance atom source can be grown. The dislocation density is lowered to about 1/10 of that of a conventional single crystal, and the number of submicrocrystals contained in the crystal rod is reduced to 1/5W1/10 per unit vol.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54124649A JPS5852959B2 (en) | 1979-09-27 | 1979-09-27 | Single crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54124649A JPS5852959B2 (en) | 1979-09-27 | 1979-09-27 | Single crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659691A true JPS5659691A (en) | 1981-05-23 |
| JPS5852959B2 JPS5852959B2 (en) | 1983-11-26 |
Family
ID=14890625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54124649A Expired JPS5852959B2 (en) | 1979-09-27 | 1979-09-27 | Single crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852959B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4849379A (en) * | 1971-06-08 | 1973-07-12 | ||
| JPS4930201A (en) * | 1972-07-13 | 1974-03-18 |
-
1979
- 1979-09-27 JP JP54124649A patent/JPS5852959B2/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4849379A (en) * | 1971-06-08 | 1973-07-12 | ||
| JPS4930201A (en) * | 1972-07-13 | 1974-03-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5852959B2 (en) | 1983-11-26 |
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