JPS5661177A - Preparation of semiconductor photodetector - Google Patents

Preparation of semiconductor photodetector

Info

Publication number
JPS5661177A
JPS5661177A JP13715879A JP13715879A JPS5661177A JP S5661177 A JPS5661177 A JP S5661177A JP 13715879 A JP13715879 A JP 13715879A JP 13715879 A JP13715879 A JP 13715879A JP S5661177 A JPS5661177 A JP S5661177A
Authority
JP
Japan
Prior art keywords
regions
type
photodetector
film
islands
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13715879A
Other languages
Japanese (ja)
Inventor
Masahiro Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13715879A priority Critical patent/JPS5661177A/en
Publication of JPS5661177A publication Critical patent/JPS5661177A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the spatial resolving-power of a semiconductor photodetector by allowing polycrystalline Si layers to separate the epitaxial layer into islands in each of which each element constituting a photodetector is formed. CONSTITUTION:In the surface portions of an N type Si substrate 1, a plurality of P<+> type regions 7 to be underlays for regions separating elements are formed by diffusion and covered with SiO2 films 8. Then, on the whole surface including these, an N type epitaxial layer 9 is grown. This causes polycrystalline Si regions 10 to be produced on the film 8, the regions 10 separating the layer 9 into islands. After that, the whole surface is coated with an SiO2 film 2, in which windows are opened to form in the separated layers 9 P<+> type regions 3-5 by diffusion, which are used as photodetector elements. By this, each barrier comprising the region 7, film 8 and region 10 prevents the minority carriers produced from reaching the adjacent element. Therefore, crosstalk is greatly reduced.
JP13715879A 1979-10-23 1979-10-23 Preparation of semiconductor photodetector Pending JPS5661177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13715879A JPS5661177A (en) 1979-10-23 1979-10-23 Preparation of semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13715879A JPS5661177A (en) 1979-10-23 1979-10-23 Preparation of semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS5661177A true JPS5661177A (en) 1981-05-26

Family

ID=15192170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13715879A Pending JPS5661177A (en) 1979-10-23 1979-10-23 Preparation of semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5661177A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766666A (en) * 1980-10-13 1982-04-22 Matsushita Electronics Corp Solid state image pickup device
JPS61141177A (en) * 1984-12-14 1986-06-28 Hamamatsu Photonics Kk Semiconductor photodetecting device
JPS61141175A (en) * 1984-12-14 1986-06-28 Hamamatsu Photonics Kk Semiconductor photodetector
US4658497A (en) * 1983-01-03 1987-04-21 Rca Corporation Method of making an imaging array having a higher sensitivity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766666A (en) * 1980-10-13 1982-04-22 Matsushita Electronics Corp Solid state image pickup device
US4658497A (en) * 1983-01-03 1987-04-21 Rca Corporation Method of making an imaging array having a higher sensitivity
JPS61141177A (en) * 1984-12-14 1986-06-28 Hamamatsu Photonics Kk Semiconductor photodetecting device
JPS61141175A (en) * 1984-12-14 1986-06-28 Hamamatsu Photonics Kk Semiconductor photodetector

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