JPS5664444A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5664444A
JPS5664444A JP14059679A JP14059679A JPS5664444A JP S5664444 A JPS5664444 A JP S5664444A JP 14059679 A JP14059679 A JP 14059679A JP 14059679 A JP14059679 A JP 14059679A JP S5664444 A JPS5664444 A JP S5664444A
Authority
JP
Japan
Prior art keywords
treated
stable
60min
approx
quasi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14059679A
Other languages
Japanese (ja)
Other versions
JPS6119103B2 (en
Inventor
Toshio Sonobe
Yukio Tsuzuki
Kunihiko Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP14059679A priority Critical patent/JPS5664444A/en
Publication of JPS5664444A publication Critical patent/JPS5664444A/en
Publication of JPS6119103B2 publication Critical patent/JPS6119103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having preferable characteristics by forming a thin film on an active element region, heat treating it, then irradiating predetermined amounts of charged particle beam, ionizing radiation and electromagnetic wave thereto and again heat treating it at a predetermined temperature. CONSTITUTION:After a predetermined amount of impurity diffused layer is formed, a wiring aluminum 6 is evaporated by an electron beam evaporating process, is then heat treated, thereby conducting an ohmic contact therebetween. Subsequently, an SiO2 film 7 is formed by sputtering, and is selectively opened with windows 8. Successively, it is heat treated at 400-550 deg.C for approx. 60min, and an X-rays are then irradiated in the amount of 20-20mrad in integration using a W bulb. Eventually, it is treated at 300-500 deg.C for approx. 60min. According to this configuration unstable residual defect can be converted into quasi-stable state by the initial treatment, the stable and quasi-stable defects can be simultaneously and uniformly dispersed by the irradiation of the X-rays, thereafter it is treated at low temperature causing no thermal inductive defect, thereby conducting rearray of lattice on the surface and in the boundary thereof. Accordingly, its electric characteristics can be remarkably improved.
JP14059679A 1979-10-31 1979-10-31 Manufacture of semiconductor device Granted JPS5664444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14059679A JPS5664444A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14059679A JPS5664444A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5664444A true JPS5664444A (en) 1981-06-01
JPS6119103B2 JPS6119103B2 (en) 1986-05-15

Family

ID=15272366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14059679A Granted JPS5664444A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5664444A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433920A (en) * 1977-08-19 1979-03-13 Sharp Corp Carburetor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433920A (en) * 1977-08-19 1979-03-13 Sharp Corp Carburetor

Also Published As

Publication number Publication date
JPS6119103B2 (en) 1986-05-15

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