JPS5664476A - Armophous silicon solar battery - Google Patents

Armophous silicon solar battery

Info

Publication number
JPS5664476A
JPS5664476A JP11899680A JP11899680A JPS5664476A JP S5664476 A JPS5664476 A JP S5664476A JP 11899680 A JP11899680 A JP 11899680A JP 11899680 A JP11899680 A JP 11899680A JP S5664476 A JPS5664476 A JP S5664476A
Authority
JP
Japan
Prior art keywords
solar battery
silicon solar
armophous
armophous silicon
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11899680A
Other languages
English (en)
Japanese (ja)
Inventor
Uiriamu Mabitsuto Aren
Shimon Sasuman Rikaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7930141A external-priority patent/GB2030766A/en
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Publication of JPS5664476A publication Critical patent/JPS5664476A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP11899680A 1979-08-30 1980-08-28 Armophous silicon solar battery Pending JPS5664476A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7930141A GB2030766A (en) 1978-09-02 1979-08-30 Laser treatment of semiconductor material

Publications (1)

Publication Number Publication Date
JPS5664476A true JPS5664476A (en) 1981-06-01

Family

ID=10507509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11899680A Pending JPS5664476A (en) 1979-08-30 1980-08-28 Armophous silicon solar battery

Country Status (3)

Country Link
JP (1) JPS5664476A (fr)
DE (1) DE3032158A1 (fr)
FR (1) FR2464565A1 (fr)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57104276A (en) * 1980-12-19 1982-06-29 Kanegafuchi Chem Ind Co Ltd Amorphous silicon thin film photoelectric element
JPS57126175A (en) * 1981-01-29 1982-08-05 Kanegafuchi Chem Ind Co Ltd Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
JPS5853869A (ja) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS58156640U (ja) * 1982-04-16 1983-10-19 凸版印刷株式会社 押出チユ−ブ容器
JPS5954275A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
JPS59101879A (ja) * 1982-12-02 1984-06-12 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池
JPS59101880A (ja) * 1982-12-03 1984-06-12 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池
JPS59125669A (ja) * 1983-01-07 1984-07-20 Agency Of Ind Science & Technol 太陽電池
JPS6030180A (ja) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd 非晶質薄膜光起電力素子
JPS6037788A (ja) * 1983-08-10 1985-02-27 Agency Of Ind Science & Technol 太陽電池
JPS6043869A (ja) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
JPS60233870A (ja) * 1984-02-24 1985-11-20 エナージー・コンバーション・デバイセス・インコーポレーテッド 反射防止二重層コ−テイングを備えた光感応半導体デバイス
JPS60249376A (ja) * 1984-04-27 1985-12-10 スコツト・ウイードマン 光電池及びその製造方法
JPS60250681A (ja) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 無秩序性多層半導体構造体
JPS63102275A (ja) * 1986-10-20 1988-05-07 Taiyo Yuden Co Ltd 非晶質半導体太陽電池
JPS6382958U (fr) * 1986-11-18 1988-05-31
JPS63244888A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63244889A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH0722638A (ja) * 1993-11-18 1995-01-24 Plasma Physics Corp 半導体装置
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
DE4408791B4 (de) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
JP4752168B2 (ja) * 2000-03-13 2011-08-17 ソニー株式会社 光エネルギー変換装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
JPS56116673A (en) * 1980-02-19 1981-09-12 Sharp Corp Amorphous thin film solar cell
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPS59130483A (ja) * 1982-12-24 1984-07-27 Ricoh Co Ltd 薄膜太陽電池
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
DE102009036702A1 (de) 2009-08-07 2011-02-17 Kdg Mediatech Ag Solarzelle

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57104276A (en) * 1980-12-19 1982-06-29 Kanegafuchi Chem Ind Co Ltd Amorphous silicon thin film photoelectric element
JPS57126175A (en) * 1981-01-29 1982-08-05 Kanegafuchi Chem Ind Co Ltd Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
JPS5853869A (ja) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS58156640U (ja) * 1982-04-16 1983-10-19 凸版印刷株式会社 押出チユ−ブ容器
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5954275A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
JPS59101879A (ja) * 1982-12-02 1984-06-12 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池
JPS59101880A (ja) * 1982-12-03 1984-06-12 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池
JPS59125669A (ja) * 1983-01-07 1984-07-20 Agency Of Ind Science & Technol 太陽電池
JPS6030180A (ja) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd 非晶質薄膜光起電力素子
JPS6037788A (ja) * 1983-08-10 1985-02-27 Agency Of Ind Science & Technol 太陽電池
JPS6043869A (ja) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
JPS60233870A (ja) * 1984-02-24 1985-11-20 エナージー・コンバーション・デバイセス・インコーポレーテッド 反射防止二重層コ−テイングを備えた光感応半導体デバイス
JPH07312433A (ja) * 1984-04-27 1995-11-28 Scott Wiedeman 光電池
JPS60249376A (ja) * 1984-04-27 1985-12-10 スコツト・ウイードマン 光電池及びその製造方法
JPS60250681A (ja) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 無秩序性多層半導体構造体
JPS63102275A (ja) * 1986-10-20 1988-05-07 Taiyo Yuden Co Ltd 非晶質半導体太陽電池
JPS6382958U (fr) * 1986-11-18 1988-05-31
JPS63244888A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63244889A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
DE4408791B4 (de) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
JPH0722638A (ja) * 1993-11-18 1995-01-24 Plasma Physics Corp 半導体装置
JP4752168B2 (ja) * 2000-03-13 2011-08-17 ソニー株式会社 光エネルギー変換装置

Also Published As

Publication number Publication date
DE3032158A1 (de) 1981-04-02
FR2464565A1 (fr) 1981-03-06

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