JPS566455A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS566455A
JPS566455A JP8192479A JP8192479A JPS566455A JP S566455 A JPS566455 A JP S566455A JP 8192479 A JP8192479 A JP 8192479A JP 8192479 A JP8192479 A JP 8192479A JP S566455 A JPS566455 A JP S566455A
Authority
JP
Japan
Prior art keywords
film
radioactive rays
gate
radiation
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8192479A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8192479A priority Critical patent/JPS566455A/en
Publication of JPS566455A publication Critical patent/JPS566455A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent damage of a gate insulating layer in a semiconductor device and eliminate the characteristic change of the device by eliminating radiation of radioactive rays to a gate region of an insulating film thereon in a photoetching step when forming an MOS device having a low melting point metal multilayer wiring architecture. CONSTITUTION:An insulating film 3 is formed on the substrate 2 of an MOS device having a wiring layer 1 provided in the previous step, a plurality of through holes 4 are formed at the necessary positions of the film 3, and a low melting point metallic film 5 of metal such as aluminum is formed thereon. Then, a radiation- sensitive resist 6 is coated on the film 5 to pattern it, and radioactive rays such as electron beam or X-ray are selectively irradiated thereto. It is eliminated to irradiate the radioactive rays to the gate regions 7' at this time to selectively etch the metallic film so as to form wiring patterns 8, 8' thereon. In this manner, it eliminates damage of the gate film with radiation of radioactive rays so as to prevent alteration of characteristics of this semiconductor device.
JP8192479A 1979-06-28 1979-06-28 Manufacture of semiconductor device Pending JPS566455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8192479A JPS566455A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8192479A JPS566455A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS566455A true JPS566455A (en) 1981-01-23

Family

ID=13759998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8192479A Pending JPS566455A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS566455A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168937A (en) * 1984-09-13 1986-04-09 Ohbayashigumi Ltd Transportation of cohesive soil
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50549A (en) * 1973-05-10 1975-01-07
JPS5352384A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50549A (en) * 1973-05-10 1975-01-07
JPS5352384A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6168937A (en) * 1984-09-13 1986-04-09 Ohbayashigumi Ltd Transportation of cohesive soil
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device

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