JPS5665979A - Production of heat-resistant silicide film with aluminum oxide vapor deposited compositely - Google Patents
Production of heat-resistant silicide film with aluminum oxide vapor deposited compositelyInfo
- Publication number
- JPS5665979A JPS5665979A JP13932479A JP13932479A JPS5665979A JP S5665979 A JPS5665979 A JP S5665979A JP 13932479 A JP13932479 A JP 13932479A JP 13932479 A JP13932479 A JP 13932479A JP S5665979 A JPS5665979 A JP S5665979A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- silicon
- heat
- silicide film
- compositely
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021332 silicide Inorganic materials 0.000 title abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 239000012808 vapor phase Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- -1 silicon-aluminum-oxygen Chemical compound 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a heat-resistant silicide film, by inducing glow discharge to cause plasma chemical reaction in the vapor phase where nitrogen or carbon- containing gas is mixed with mixture vapor of silicon vapor, aluminum vapor and oxygen. CONSTITUTION:The material consisting of, for example, molybdenum and tungsten is fitted into the ion plating device, and silicon and alumina pieces are provided in the device. After air in the device is evacuated and inert gas is led into the device, silicon and alumina are fused and evaporated by electron beam impulse to generate mixture gas of silicon-aluminum-oxygen. The carbon source such as acetylene and the nitrogen source such as ammonia are led into this vapor and are mixed. Glow discharge is induced in this vapor phase by high-frequency discharge, microwave discharge, and so on to cause plasma chemical reaction, thereby depositing a composite silicide on the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13932479A JPS5849634B2 (en) | 1979-10-30 | 1979-10-30 | Method for producing heat-resistant silicide film with composite vapor deposition of aluminum oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13932479A JPS5849634B2 (en) | 1979-10-30 | 1979-10-30 | Method for producing heat-resistant silicide film with composite vapor deposition of aluminum oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5665979A true JPS5665979A (en) | 1981-06-04 |
| JPS5849634B2 JPS5849634B2 (en) | 1983-11-05 |
Family
ID=15242651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13932479A Expired JPS5849634B2 (en) | 1979-10-30 | 1979-10-30 | Method for producing heat-resistant silicide film with composite vapor deposition of aluminum oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5849634B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107035A (en) * | 2017-12-07 | 2018-06-01 | 中铝材料应用研究院有限公司 | A kind of method that glow discharge spectrometry measures aluminium material surface coating mass |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6582411B2 (en) * | 2012-09-28 | 2019-10-02 | 大日本印刷株式会社 | Transparent vapor deposition film |
-
1979
- 1979-10-30 JP JP13932479A patent/JPS5849634B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107035A (en) * | 2017-12-07 | 2018-06-01 | 中铝材料应用研究院有限公司 | A kind of method that glow discharge spectrometry measures aluminium material surface coating mass |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5849634B2 (en) | 1983-11-05 |
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