JPS5666074A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS5666074A
JPS5666074A JP14346579A JP14346579A JPS5666074A JP S5666074 A JPS5666074 A JP S5666074A JP 14346579 A JP14346579 A JP 14346579A JP 14346579 A JP14346579 A JP 14346579A JP S5666074 A JPS5666074 A JP S5666074A
Authority
JP
Japan
Prior art keywords
source
drain
covered
channel
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14346579A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14346579A priority Critical patent/JPS5666074A/en
Publication of JPS5666074A publication Critical patent/JPS5666074A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the degree of concentration when an IGFET is formed for the subject transistor by a method wherein a source and drain region is not provided by diffusing impurities, but a metal layer is covered on a semiconductor substrate and is used as a source and a drain. CONSTITUTION:A thick field oxide film 2 is formed on the circumference of a P type Si substrate 1 and a high-melting point metal layer 12 is covered on the whole surface including the oxide film 2 by performing a sputtering or the like. Then the channel forming section of the layer 12 is removed by performing a selective etching, the above layer is left and isolated while a source 13 and a drain 14 are being obtained, and the whole surface is covered by an SiO2 or an Si3N4 film 15. After that, a gate 6 consiting of a polycrystalline Si is formed on the film 15 corresponding to the channel region located between the source 13 and the drain 14, while the whole surface is covered by an insulating film 7, a window is opened, electrodes 8 and 9 are installed on the source 13 and the drain 14 respectively, and an electrode 10 is installed on the gate 6. Thus, the occurrence of a short-channel effect can be suppressed by shortening the length of the channel.
JP14346579A 1979-11-05 1979-11-05 Insulating gate type field-effect transistor Pending JPS5666074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14346579A JPS5666074A (en) 1979-11-05 1979-11-05 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14346579A JPS5666074A (en) 1979-11-05 1979-11-05 Insulating gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5666074A true JPS5666074A (en) 1981-06-04

Family

ID=15339331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14346579A Pending JPS5666074A (en) 1979-11-05 1979-11-05 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5666074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103671A (en) * 1983-11-11 1985-06-07 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103671A (en) * 1983-11-11 1985-06-07 Toshiba Corp Semiconductor device

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