JPS5669865A - Field-effect type transistor - Google Patents

Field-effect type transistor

Info

Publication number
JPS5669865A
JPS5669865A JP14827879A JP14827879A JPS5669865A JP S5669865 A JPS5669865 A JP S5669865A JP 14827879 A JP14827879 A JP 14827879A JP 14827879 A JP14827879 A JP 14827879A JP S5669865 A JPS5669865 A JP S5669865A
Authority
JP
Japan
Prior art keywords
regions
source
electrode
constitution
common
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14827879A
Other languages
Japanese (ja)
Inventor
Teruaki Harada
Takeo Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14827879A priority Critical patent/JPS5669865A/en
Publication of JPS5669865A publication Critical patent/JPS5669865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain large gm by a small area by a method wherein a plurality of drain regions are oppositely disposed to a plurality of source regions through gate regions, and source and drain electrodes are formed. CONSTITUTION:A plurality of source and drain regions 22, 23 are made up to a P type Si substrate 21, and the exposing surfaces take squares and are mutually in parallel. These regions have channel forming regions 21a through Goto oxide films 24 under reticulate gate electrodes 25. The sources 22 are connected by a comblike electrode 26 in common, and the drains 23 are connected by an electrode 27 biting with the electrode 26 each other at fixed intervals in common. Distances L' among connecting holes and the surroundings of diffusion layers are made about several mum. According to this constitution, an FET having a remarkable large gm is gained without expanding the surface area.
JP14827879A 1979-11-12 1979-11-12 Field-effect type transistor Pending JPS5669865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14827879A JPS5669865A (en) 1979-11-12 1979-11-12 Field-effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14827879A JPS5669865A (en) 1979-11-12 1979-11-12 Field-effect type transistor

Publications (1)

Publication Number Publication Date
JPS5669865A true JPS5669865A (en) 1981-06-11

Family

ID=15449181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14827879A Pending JPS5669865A (en) 1979-11-12 1979-11-12 Field-effect type transistor

Country Status (1)

Country Link
JP (1) JPS5669865A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match
JPH04165678A (en) * 1990-10-30 1992-06-11 Nippon Motoroola Kk Mesh gate type mos transistor
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
US5760454A (en) * 1995-04-11 1998-06-02 Oki Electric Industry Co., Ltd. Pattern form of an active region of a MOS type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match
JPH04165678A (en) * 1990-10-30 1992-06-11 Nippon Motoroola Kk Mesh gate type mos transistor
US5760454A (en) * 1995-04-11 1998-06-02 Oki Electric Industry Co., Ltd. Pattern form of an active region of a MOS type semiconductor device

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