JPS5669882A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS5669882A
JPS5669882A JP14574479A JP14574479A JPS5669882A JP S5669882 A JPS5669882 A JP S5669882A JP 14574479 A JP14574479 A JP 14574479A JP 14574479 A JP14574479 A JP 14574479A JP S5669882 A JPS5669882 A JP S5669882A
Authority
JP
Japan
Prior art keywords
diode
laser chip
lights
submount
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14574479A
Other languages
Japanese (ja)
Inventor
Hiroshi Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14574479A priority Critical patent/JPS5669882A/en
Publication of JPS5669882A publication Critical patent/JPS5669882A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To simplify assembly extremely and miniaturize a device by forming a submount and a light receiving element in monolithic shapes. CONSTITUTION:A submount 2 and a photodiode 7 are integrally made up on a substrate 13, and a laser chip 1 is united. The laser chip has electrodes 9a, 9b, and the diode 7has electrodes 9c, 9d. A glass piece 10 obliquely cut is fixed on the diode 7. One side of lights emitted from an active layer 11 of the laser chip 1 is reflected by a cut surface 10a of the glass 10, and projected into a light receiving surface 12 of the diode 7. The lights are converted into electricity by means of the diode 7 in response to incident lights, and used as monitor signals. According to this constitution, the laser chip 1 and the substrate 13 are joined to a package 3 at the same time, assembly is simplified, and a device can be miniaturized.
JP14574479A 1979-11-09 1979-11-09 Semiconductor luminous device Pending JPS5669882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14574479A JPS5669882A (en) 1979-11-09 1979-11-09 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14574479A JPS5669882A (en) 1979-11-09 1979-11-09 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS5669882A true JPS5669882A (en) 1981-06-11

Family

ID=15392137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14574479A Pending JPS5669882A (en) 1979-11-09 1979-11-09 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS5669882A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821889A (en) * 1981-07-31 1983-02-08 Sony Corp Semiconductor assembly structure
JPS5972748U (en) * 1982-11-08 1984-05-17 日本電気株式会社 Optical semiconductor device
JPS6161864U (en) * 1984-09-26 1986-04-25
JPS6161863U (en) * 1984-09-26 1986-04-25
US5052005A (en) * 1988-12-19 1991-09-24 Rohm Co., Ltd. Method of mounting a laser diode unit
US5233580A (en) * 1988-12-19 1993-08-03 Rohm Co., Ltd. Laser diode unit welded to a mounting member by laser light
US5268922A (en) * 1991-10-31 1993-12-07 International Business Machines Corporation Laser diode assembly
EP0713271A1 (en) * 1994-11-18 1996-05-22 Nortel Networks Corporation Injection laser assembly incorporating a monitor photosensor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821889A (en) * 1981-07-31 1983-02-08 Sony Corp Semiconductor assembly structure
JPS5972748U (en) * 1982-11-08 1984-05-17 日本電気株式会社 Optical semiconductor device
JPS6161864U (en) * 1984-09-26 1986-04-25
JPS6161863U (en) * 1984-09-26 1986-04-25
US5052005A (en) * 1988-12-19 1991-09-24 Rohm Co., Ltd. Method of mounting a laser diode unit
US5233580A (en) * 1988-12-19 1993-08-03 Rohm Co., Ltd. Laser diode unit welded to a mounting member by laser light
US5268922A (en) * 1991-10-31 1993-12-07 International Business Machines Corporation Laser diode assembly
EP0713271A1 (en) * 1994-11-18 1996-05-22 Nortel Networks Corporation Injection laser assembly incorporating a monitor photosensor

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