JPS5673443A - Induction type finding method for silicon wafer - Google Patents

Induction type finding method for silicon wafer

Info

Publication number
JPS5673443A
JPS5673443A JP15030279A JP15030279A JPS5673443A JP S5673443 A JPS5673443 A JP S5673443A JP 15030279 A JP15030279 A JP 15030279A JP 15030279 A JP15030279 A JP 15030279A JP S5673443 A JPS5673443 A JP S5673443A
Authority
JP
Japan
Prior art keywords
substrate
type
silicon wafer
induction type
finding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15030279A
Other languages
Japanese (ja)
Other versions
JPS6161535B2 (en
Inventor
Atsuo Iida
Masamichi Yoshida
Yoshiyuki Shibamata
Hideo Kashimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15030279A priority Critical patent/JPS5673443A/en
Publication of JPS5673443A publication Critical patent/JPS5673443A/en
Publication of JPS6161535B2 publication Critical patent/JPS6161535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To find the conduction type of the subject wafer by a method wherein an Si substrate is heat-oxidated, a selective etching is performed and the conduction type is found by the light or darkness of the point of the defective section using a microscope. CONSTITUTION:The oxide film of a high-temperature oxidized Si substrate is removed using Hf, and the substrate is soaked in CH3COOH+H2O+NHO3+ CrO2+Cu(NO3)2+HF for about one minute. When an etched pattern is observed using a microscope, the point of the defective section for a P type is seen black and it is seen bright for an N type. Therefore, the conductive type of the substrate can be found according to the difference of the contrast.
JP15030279A 1979-11-20 1979-11-20 Induction type finding method for silicon wafer Granted JPS5673443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15030279A JPS5673443A (en) 1979-11-20 1979-11-20 Induction type finding method for silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15030279A JPS5673443A (en) 1979-11-20 1979-11-20 Induction type finding method for silicon wafer

Publications (2)

Publication Number Publication Date
JPS5673443A true JPS5673443A (en) 1981-06-18
JPS6161535B2 JPS6161535B2 (en) 1986-12-26

Family

ID=15494026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15030279A Granted JPS5673443A (en) 1979-11-20 1979-11-20 Induction type finding method for silicon wafer

Country Status (1)

Country Link
JP (1) JPS5673443A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01193823A (en) * 1988-01-29 1989-08-03 Konica Corp Photographing device for id card

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS *

Also Published As

Publication number Publication date
JPS6161535B2 (en) 1986-12-26

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