JPS567483A - Manufacturing of field-effect semiconductor device - Google Patents
Manufacturing of field-effect semiconductor deviceInfo
- Publication number
- JPS567483A JPS567483A JP8297579A JP8297579A JPS567483A JP S567483 A JPS567483 A JP S567483A JP 8297579 A JP8297579 A JP 8297579A JP 8297579 A JP8297579 A JP 8297579A JP S567483 A JPS567483 A JP S567483A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- sio2 film
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make uniform electric characteristics such as low-frequency noise characteristic, mutual conductance, and pinch-off voltage by forming a p-n junction type FET by forming a gate region in an n-type channel region by the injection of BF2<+> molecular ions. CONSTITUTION:An SiO2 film 12 of a predetermined configuration is provided on a p-type Si substrate 11, and a p<+> separation region 13 is diffused and formed in a substrate 11 on the outer side of the film 12 using the film 12 as a mask. A thin SiO2 film is applied on the region 13, and the film 12 encircled by the SiO2 film is renewed to a SiO2 film 15, and at the same time the film on the region 13 is converted into a thick SiO2 film 14. Then, by the ion injection, an n-type well region 16 is formed in the substrate 11 below the film 15, the film 15 is again renewed into a thick SiO2 film 17, n<+>-type source and drain regions 18 and 19 infiltrated into the substrate 11 are diffused and formed in the region 16 by opening the window. Thereafter, the film 17 is further converted into a thick SiO2 film 20 and the window is formed in a gate forming region, where an injection layer 22 due to BF2<+> molecular ions through a thin SiO2 film 21 is provided and thereafter the layer 22 is subjected to heat treatment to form a p<+> gate region 24.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8297579A JPS567483A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of field-effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8297579A JPS567483A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of field-effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS567483A true JPS567483A (en) | 1981-01-26 |
Family
ID=13789210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8297579A Pending JPS567483A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of field-effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS567483A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0262929U (en) * | 1988-10-31 | 1990-05-10 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5291380A (en) * | 1976-01-26 | 1977-08-01 | Sony Corp | Field effect transistor |
| JPS549470A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Refuse treating device |
-
1979
- 1979-06-29 JP JP8297579A patent/JPS567483A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5291380A (en) * | 1976-01-26 | 1977-08-01 | Sony Corp | Field effect transistor |
| JPS549470A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Refuse treating device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0262929U (en) * | 1988-10-31 | 1990-05-10 |
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