JPS5674924A - Method of manufacturing semiconductor element - Google Patents

Method of manufacturing semiconductor element

Info

Publication number
JPS5674924A
JPS5674924A JP15212279A JP15212279A JPS5674924A JP S5674924 A JPS5674924 A JP S5674924A JP 15212279 A JP15212279 A JP 15212279A JP 15212279 A JP15212279 A JP 15212279A JP S5674924 A JPS5674924 A JP S5674924A
Authority
JP
Japan
Prior art keywords
impurity
diffusion
concentration
semiconductor substrate
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15212279A
Other languages
Japanese (ja)
Inventor
Shoichi Kitane
Shigeru Honjo
Kenji Azetsubo
Fumio Tobioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15212279A priority Critical patent/JPS5674924A/en
Publication of JPS5674924A publication Critical patent/JPS5674924A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To provide a high concentration layer to a substrate having a large diameter effectively by applying a liquid solution including a dopant for a semiconductor substrate to a desired thickness directly, heating it and preparing a diffusion layer. CONSTITUTION:An impure undiluted solution is dropped onto a semiconductor substrate and coats it while rotating. An impurity concentration in a coating film and film thickness for forming are prescribed. Then, when these plates are separately arranged from one another and performed the heat diffusion in a heating furnace, the seat resistance thereof becomes uniform. In this case, the undiluted solution of impurity is controlled to within a range of 16-49.5wt% of the concentration and of 0.7-1.5mu of a film thickness of rotation coating with an alcohol solution including P2O5. As the result of this method, the variation of a sheet resistance is decreased and the diffusion of the impurity can be performed with good controlling.
JP15212279A 1979-11-26 1979-11-26 Method of manufacturing semiconductor element Pending JPS5674924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15212279A JPS5674924A (en) 1979-11-26 1979-11-26 Method of manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15212279A JPS5674924A (en) 1979-11-26 1979-11-26 Method of manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5674924A true JPS5674924A (en) 1981-06-20

Family

ID=15533535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15212279A Pending JPS5674924A (en) 1979-11-26 1979-11-26 Method of manufacturing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5674924A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092611A (en) * 1983-10-26 1985-05-24 Rohm Co Ltd Diffusing method of impurity of semiconductor element
JPS6092610A (en) * 1983-10-26 1985-05-24 Rohm Co Ltd Control method of quantity of boron diffused

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092611A (en) * 1983-10-26 1985-05-24 Rohm Co Ltd Diffusing method of impurity of semiconductor element
JPS6092610A (en) * 1983-10-26 1985-05-24 Rohm Co Ltd Control method of quantity of boron diffused

Similar Documents

Publication Publication Date Title
JPS57132372A (en) Manufacture of p-n junction type thin silicon band
JPS60245218A (en) Method and apparatus for producing semiconductor element
DE1544245B2 (en) Method for doping semiconductors bodies
JPH03119722A (en) Dopant film and impurity diffusion using it
JPS5674924A (en) Method of manufacturing semiconductor element
DE2253411A1 (en) PROCESS FOR MANUFACTURING DIRECT HEATABLE HOLLOW BODIES FOR DIFFUSION PURPOSES, CONSISTING OF SEMICONDUCTOR MATERIAL
GB1510597A (en) Methods of forming covering layers of silicate on semiconductor wafers
JPS5494869A (en) Production of semiconductor device
JPS55158679A (en) Manufacture of solar cell
JPS6112034A (en) Formation of silicon oxide film on silicon substrate surface
Hosono et al. Cation Exchange Properties of LiTi2 (PO 4) 3 and Synthesis of Its Microporous Materials via Glass
JPS57184216A (en) Forming impurity diffusion layer on surface of semiconductor element substrate
JPS57133660A (en) Controlling method for resistance value of polycrystalline semiconductor
JPS5671936A (en) Diffusion of impurity
AT249748B (en) Process for the production of semiconductor single crystals by single-crystal deposition of semiconductor material
JPS57184215A (en) Forming impurity diffusion layer on surface of semiconductor element substrate
US3180755A (en) Method of diffusing boron into silicon wafers
JP2002329676A (en) Antimony diffusion method
JPS5476066A (en) Pattern forming method
TWI380464B (en) Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus
JPS58188168A (en) Manufacture of solar battery
JPS57194524A (en) Manufacture of semiconductor device
JPS5651830A (en) Glassivating method for bevel-type semiconductor element
JPS6089568A (en) Formation of tantalum-aluminum alloy film
JPS6253934B2 (en)