JPS5678152A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS5678152A
JPS5678152A JP15437779A JP15437779A JPS5678152A JP S5678152 A JPS5678152 A JP S5678152A JP 15437779 A JP15437779 A JP 15437779A JP 15437779 A JP15437779 A JP 15437779A JP S5678152 A JPS5678152 A JP S5678152A
Authority
JP
Japan
Prior art keywords
region
type
island
layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15437779A
Other languages
Japanese (ja)
Other versions
JPH0122743B2 (en
Inventor
Mikio Haijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15437779A priority Critical patent/JPS5678152A/en
Publication of JPS5678152A publication Critical patent/JPS5678152A/en
Publication of JPH0122743B2 publication Critical patent/JPH0122743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To improve a current amplifying rate of an I<2>L element, by a method wherein, when the I<2>L element and a bipolar transistor are indivudually placed in island-shaped regions which are separated from each other, and most of carriers, poured into a base region, of which the I<2>L element consists, are supplied from a submerged emitter region of a high impurity density. CONSTITUTION:Two type N<+> submerged regions 23 are formed in a type P Si substrate, and a type N layer 21 is epitaxially grown on the whole surface including the regions 23. The layer 21 is separated into island-shaped layers 34 and 35 including each region 23 by means of a region 22. Type P regions 25 and 26 and a type N<+> region 27 positioned in the region 26 are formed in the one layer 34. An I<2>L element consists of the region 26, the island-shaped layer 34, and the region 25, and an inverse transistor consists of the region 23, the island-shaped layer 34, and the regions 25 and 27. A type P region 24 and an N<+> region 28 located therein are also formed in the island-shaped layer 35, and a bipolar type transistor consists of them.
JP15437779A 1979-11-30 1979-11-30 Semiconductor integrated circuit device and manufacture thereof Granted JPS5678152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15437779A JPS5678152A (en) 1979-11-30 1979-11-30 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15437779A JPS5678152A (en) 1979-11-30 1979-11-30 Semiconductor integrated circuit device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5678152A true JPS5678152A (en) 1981-06-26
JPH0122743B2 JPH0122743B2 (en) 1989-04-27

Family

ID=15582813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15437779A Granted JPS5678152A (en) 1979-11-30 1979-11-30 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5678152A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106278A (en) * 1976-03-03 1977-09-06 Mitsubishi Electric Corp Manufacture of bipolar cmos semiconductor device
JPS5338990A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Iil semiconductor device
JPS5387186A (en) * 1977-01-12 1978-08-01 Hitachi Ltd Semiconductor ingegrated circuit device
JPS53101960A (en) * 1977-02-18 1978-09-05 Toshiba Corp Oscillation circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106278A (en) * 1976-03-03 1977-09-06 Mitsubishi Electric Corp Manufacture of bipolar cmos semiconductor device
JPS5338990A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Iil semiconductor device
JPS5387186A (en) * 1977-01-12 1978-08-01 Hitachi Ltd Semiconductor ingegrated circuit device
JPS53101960A (en) * 1977-02-18 1978-09-05 Toshiba Corp Oscillation circuit device

Also Published As

Publication number Publication date
JPH0122743B2 (en) 1989-04-27

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