JPS5678411A - Preparation of noncrystalline silicon film - Google Patents
Preparation of noncrystalline silicon filmInfo
- Publication number
- JPS5678411A JPS5678411A JP15164679A JP15164679A JPS5678411A JP S5678411 A JPS5678411 A JP S5678411A JP 15164679 A JP15164679 A JP 15164679A JP 15164679 A JP15164679 A JP 15164679A JP S5678411 A JPS5678411 A JP S5678411A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- silicon
- film
- ionized
- bond strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000011856 silicon-based particle Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To prepare the titled film having improved bond strength to a base plate at high growth rate inexpensively, by heating and vaporizing silicon in a vacuum vessel which is in an atmosphere of ionized hydrogen or fluorine. CONSTITUTION:An exhaust pump connected to the exhaust gas vent 10 is started, the interior of the vacuum vessel 1 is made in reduced pressure, and the base plate 3 attached to the stand 2 is heated by the heater 5. The ionizing device 9 for hydrogen of fluorine is started, the interior of the vessel 1 is made in an ionized atmosphere and the evaporation source of silicon 4 is heated by electric resistance heating or electron rays and silicon is vaporized so that a noncrystalline silicon film is deposited on the base plate 3. The vaporized silicon particles are ionized by keeping the base plate 3 negative based on the evaporation source 4 by the electric source 6 to give a noncrystalline silicon film having high bond strength to the base plate 3. A deposited film having more higher bond strength is obtained by furnishing the auxiliary electrode 7 with a direct or alternating current potential between the evaporation source 4 and the base plate 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15164679A JPS5678411A (en) | 1979-11-22 | 1979-11-22 | Preparation of noncrystalline silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15164679A JPS5678411A (en) | 1979-11-22 | 1979-11-22 | Preparation of noncrystalline silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678411A true JPS5678411A (en) | 1981-06-27 |
Family
ID=15523104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15164679A Pending JPS5678411A (en) | 1979-11-22 | 1979-11-22 | Preparation of noncrystalline silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678411A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730326A (en) * | 1980-07-30 | 1982-02-18 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
| JPS5823432A (en) * | 1981-08-05 | 1983-02-12 | Konishiroku Photo Ind Co Ltd | Manufacture of amorphous silicon |
| JPS5832411A (en) * | 1981-08-21 | 1983-02-25 | Konishiroku Photo Ind Co Ltd | Manufacture of amorphous silicon |
| JPS5844776A (en) * | 1981-09-11 | 1983-03-15 | Konishiroku Photo Ind Co Ltd | Manufacturing device for amorphous silicon solar cell |
| JPS58153323A (en) * | 1982-03-06 | 1983-09-12 | Ulvac Corp | Ion plating device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162275A (en) * | 1979-06-04 | 1980-12-17 | Konishiroku Photo Ind Co Ltd | Manufacture of solar battery |
| JPS568816A (en) * | 1979-07-04 | 1981-01-29 | Fujitsu Ltd | Manufacture of amorphous silicon film |
-
1979
- 1979-11-22 JP JP15164679A patent/JPS5678411A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162275A (en) * | 1979-06-04 | 1980-12-17 | Konishiroku Photo Ind Co Ltd | Manufacture of solar battery |
| JPS568816A (en) * | 1979-07-04 | 1981-01-29 | Fujitsu Ltd | Manufacture of amorphous silicon film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730326A (en) * | 1980-07-30 | 1982-02-18 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
| JPS5823432A (en) * | 1981-08-05 | 1983-02-12 | Konishiroku Photo Ind Co Ltd | Manufacture of amorphous silicon |
| JPS5832411A (en) * | 1981-08-21 | 1983-02-25 | Konishiroku Photo Ind Co Ltd | Manufacture of amorphous silicon |
| JPS5844776A (en) * | 1981-09-11 | 1983-03-15 | Konishiroku Photo Ind Co Ltd | Manufacturing device for amorphous silicon solar cell |
| JPS58153323A (en) * | 1982-03-06 | 1983-09-12 | Ulvac Corp | Ion plating device |
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