JPS5681982A - Power phototransistor - Google Patents

Power phototransistor

Info

Publication number
JPS5681982A
JPS5681982A JP15949579A JP15949579A JPS5681982A JP S5681982 A JPS5681982 A JP S5681982A JP 15949579 A JP15949579 A JP 15949579A JP 15949579 A JP15949579 A JP 15949579A JP S5681982 A JPS5681982 A JP S5681982A
Authority
JP
Japan
Prior art keywords
region
type
comblike
phototransistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15949579A
Other languages
Japanese (ja)
Inventor
Mitsuo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15949579A priority Critical patent/JPS5681982A/en
Publication of JPS5681982A publication Critical patent/JPS5681982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a high collector output for a power phototransistor by forming comblike base region on a semiconductor substrate, forming a comblike emitter region therein, as a power phototransistor, and forming an impurity high density region having the same conductivity type as the base region and higher density than this between the emitter regions. CONSTITUTION:The comblike P type base region 11 is diffused in the region 10b of a collector semiconductor substrate 10 having N type region 10b in the upper portion and N<+> type region 10a in the lower part, and the comblike N<+> type emitter region 12 is similarly formed therein. Then, an insulating film 14 is covered on the entire surface, a window is perforated thereat, a base pickup electrode 15 is mounted at the region 11, and an emitter pickup electrode 16 is mounted at the region 12, as a planar type power phototransistor. With this configuration, a shallow P<+> type region 13 is added to the surface layer of the region 10b between the regions 12. Thus, the incident light amount is increased, the quantum efficiency is also enhanced, thereby increasing the collector output.
JP15949579A 1979-12-08 1979-12-08 Power phototransistor Pending JPS5681982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15949579A JPS5681982A (en) 1979-12-08 1979-12-08 Power phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15949579A JPS5681982A (en) 1979-12-08 1979-12-08 Power phototransistor

Publications (1)

Publication Number Publication Date
JPS5681982A true JPS5681982A (en) 1981-07-04

Family

ID=15695009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15949579A Pending JPS5681982A (en) 1979-12-08 1979-12-08 Power phototransistor

Country Status (1)

Country Link
JP (1) JPS5681982A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471185A (en) * 1987-09-11 1989-03-16 Canon Kk Photoelectric conversion device
JPH03185878A (en) * 1989-12-15 1991-08-13 Canon Inc Photoelectric conversion device
US5483096A (en) * 1991-11-07 1996-01-09 Seiko Instruments Inc. Photo sensor
JP2009033043A (en) * 2007-07-30 2009-02-12 Panasonic Corp Optical semiconductor device
WO2019185787A1 (en) * 2018-03-29 2019-10-03 Vishay Semiconductor Gmbh Photosensitive semiconductor component, method for forming a photosensitive semiconductor component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112682A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo thyristor
JPS5455189A (en) * 1977-10-11 1979-05-02 Nippon Telegr & Teleph Corp <Ntt> Photo transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112682A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo thyristor
JPS5455189A (en) * 1977-10-11 1979-05-02 Nippon Telegr & Teleph Corp <Ntt> Photo transistor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471185A (en) * 1987-09-11 1989-03-16 Canon Kk Photoelectric conversion device
JPH03185878A (en) * 1989-12-15 1991-08-13 Canon Inc Photoelectric conversion device
US5483096A (en) * 1991-11-07 1996-01-09 Seiko Instruments Inc. Photo sensor
JP2009033043A (en) * 2007-07-30 2009-02-12 Panasonic Corp Optical semiconductor device
WO2019185787A1 (en) * 2018-03-29 2019-10-03 Vishay Semiconductor Gmbh Photosensitive semiconductor component, method for forming a photosensitive semiconductor component
CN111902950A (en) * 2018-03-29 2020-11-06 威世半导体有限公司 Photosensitive semiconductor device and method of forming the same
KR20200134316A (en) * 2018-03-29 2020-12-01 비쉐이 세미컨덕터 게엠베하 Photosensitive semiconductor component, method of forming photosensitive semiconductor component
JP2021519519A (en) * 2018-03-29 2021-08-10 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツングＶｉｓｈａｙ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ ＧｍｂＨ Photosensitive semiconductor parts and methods for forming photosensitive semiconductor parts
US11876144B2 (en) 2018-03-29 2024-01-16 Vishay Semiconductor Gmbh Photosensitive semiconductor component, method for forming a photosensitive semiconductor component
CN111902950B (en) * 2018-03-29 2025-01-21 威世半导体有限公司 Photosensitive semiconductor device and method for forming a photosensitive semiconductor device

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