JPS5687379A - Solid image pickup device - Google Patents

Solid image pickup device

Info

Publication number
JPS5687379A
JPS5687379A JP16442179A JP16442179A JPS5687379A JP S5687379 A JPS5687379 A JP S5687379A JP 16442179 A JP16442179 A JP 16442179A JP 16442179 A JP16442179 A JP 16442179A JP S5687379 A JPS5687379 A JP S5687379A
Authority
JP
Japan
Prior art keywords
transfer
electrodes
vertical
films
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16442179A
Other languages
Japanese (ja)
Other versions
JPH0130306B2 (en
Inventor
Mitsuo Nakayama
Hiroshi Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16442179A priority Critical patent/JPS5687379A/en
Publication of JPS5687379A publication Critical patent/JPS5687379A/en
Publication of JPH0130306B2 publication Critical patent/JPH0130306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve photographic sensitivity by reducing the area of transfer electrodes and expanding that of a light-sensitive section by connecting metal thin films for shading and transfer electrodes wherein transfer pulses are applied to the transfer electrodes through the metal thin films. CONSTITUTION:Photodiodes 6 serving as a light-sensitive section and high-impurity regions 11 are provided on a P type Si substrate and transfer electrodes 7, 8 for charge transfer element as a vertical scanning circuit and write electrodes 9 are also provided through insulators 10. And Al electrode films 13, 14 covering all the regions of the vertical transfer stage of the charge transfer element to shield the light incident upon the transfer stage and also applying vertical transfer clock pulses for transfer in a vertical direction are provided. And contact holes are provided in the insulating films 10 and the electrode films 13, 14 and the transfer electrodes 8, 9 are connected.
JP16442179A 1979-12-17 1979-12-17 Solid image pickup device Granted JPS5687379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16442179A JPS5687379A (en) 1979-12-17 1979-12-17 Solid image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16442179A JPS5687379A (en) 1979-12-17 1979-12-17 Solid image pickup device

Publications (2)

Publication Number Publication Date
JPS5687379A true JPS5687379A (en) 1981-07-15
JPH0130306B2 JPH0130306B2 (en) 1989-06-19

Family

ID=15792818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16442179A Granted JPS5687379A (en) 1979-12-17 1979-12-17 Solid image pickup device

Country Status (1)

Country Link
JP (1) JPS5687379A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202578A (en) * 1985-03-06 1986-09-08 Hitachi Ltd solid-state image sensor
JPS6441586A (en) * 1987-08-07 1989-02-13 Toshiba Corp Solid-state image pick-up device
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device
JPH0548069A (en) * 1991-08-07 1993-02-26 Nec Corp Solid-state image sensing device
US5194751A (en) * 1989-07-17 1993-03-16 Sony Corporation Structure of solid-state image sensing devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337392A (en) * 1976-09-17 1978-04-06 Sanyo Electric Co Ltd Driving pulse supplying method of charge coupled type semiconductor device
JPS5475927A (en) * 1977-11-30 1979-06-18 Toshiba Corp Area sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337392A (en) * 1976-09-17 1978-04-06 Sanyo Electric Co Ltd Driving pulse supplying method of charge coupled type semiconductor device
JPS5475927A (en) * 1977-11-30 1979-06-18 Toshiba Corp Area sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202578A (en) * 1985-03-06 1986-09-08 Hitachi Ltd solid-state image sensor
JPS6441586A (en) * 1987-08-07 1989-02-13 Toshiba Corp Solid-state image pick-up device
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device
US5194751A (en) * 1989-07-17 1993-03-16 Sony Corporation Structure of solid-state image sensing devices
JPH0548069A (en) * 1991-08-07 1993-02-26 Nec Corp Solid-state image sensing device

Also Published As

Publication number Publication date
JPH0130306B2 (en) 1989-06-19

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