JPS5687390A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5687390A
JPS5687390A JP16407379A JP16407379A JPS5687390A JP S5687390 A JPS5687390 A JP S5687390A JP 16407379 A JP16407379 A JP 16407379A JP 16407379 A JP16407379 A JP 16407379A JP S5687390 A JPS5687390 A JP S5687390A
Authority
JP
Japan
Prior art keywords
sides
reflecting mirror
layer
along
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16407379A
Other languages
Japanese (ja)
Inventor
Hisatoshi Uchida
Masaaki Sawai
Makoto Morioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16407379A priority Critical patent/JPS5687390A/en
Publication of JPS5687390A publication Critical patent/JPS5687390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent surface contamination by providing grooves exposing an active layer and a junction layer along both sides of reflecting mirror sides and a right angle direction in a double-hetero structure laser diode wherein the surface is covered by passivation films. CONSTITUTION:An N-GaAlAs layer 2, an N-GaAs active layer 3 and a P-GaAlAs layer 4 are formed on a main surface of an N-GaAs substrate 1 and laser light is excited between reflecting mirror sides A-A' by applying voltage between an upper electrode 5 and a lower electrode 6. In such a laser diode, after cutting the substrate 1 along the laser light reflecting mirror sides A, A', an active layer and a P-N junction layer are exposed to groove surfaces by forming grooves 7, 7' on the surface of the substrate 1 along reflecting mirror sides and a right angle direction. P-N junction sides at both sides B, B' will be protected by splitting the semiconductor substrate into pellets along the grooves 7, 7' after applying passivation films 8, 8' on the surfaces of the grooves.
JP16407379A 1979-12-19 1979-12-19 Semiconductor laser Pending JPS5687390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16407379A JPS5687390A (en) 1979-12-19 1979-12-19 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16407379A JPS5687390A (en) 1979-12-19 1979-12-19 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5687390A true JPS5687390A (en) 1981-07-15

Family

ID=15786258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16407379A Pending JPS5687390A (en) 1979-12-19 1979-12-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5687390A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198686A (en) * 1990-11-13 1993-03-30 Kabushiki Kaisha Toshiba Double hetero-type semiconductor laser device
JP2009252998A (en) * 2008-04-07 2009-10-29 Sanyo Electric Co Ltd Semiconductor light emitting element and method of manufacturing the same
JP2013058625A (en) * 2011-09-08 2013-03-28 Mitsubishi Electric Corp Manufacturing method of laser diode element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120690A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Manufacturing method for semiconductor apparatus
JPS5211618A (en) * 1975-07-16 1977-01-28 Kubota Ltd Method of tiling over tile and tile
JPS5362489A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp Production of semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120690A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Manufacturing method for semiconductor apparatus
JPS5211618A (en) * 1975-07-16 1977-01-28 Kubota Ltd Method of tiling over tile and tile
JPS5362489A (en) * 1976-11-16 1978-06-03 Mitsubishi Electric Corp Production of semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198686A (en) * 1990-11-13 1993-03-30 Kabushiki Kaisha Toshiba Double hetero-type semiconductor laser device
JP2009252998A (en) * 2008-04-07 2009-10-29 Sanyo Electric Co Ltd Semiconductor light emitting element and method of manufacturing the same
JP2013058625A (en) * 2011-09-08 2013-03-28 Mitsubishi Electric Corp Manufacturing method of laser diode element

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