JPS568841A - Measuring method of micro probe deep level - Google Patents

Measuring method of micro probe deep level

Info

Publication number
JPS568841A
JPS568841A JP8516079A JP8516079A JPS568841A JP S568841 A JPS568841 A JP S568841A JP 8516079 A JP8516079 A JP 8516079A JP 8516079 A JP8516079 A JP 8516079A JP S568841 A JPS568841 A JP S568841A
Authority
JP
Japan
Prior art keywords
deep level
variations
deltac
cryostat
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8516079A
Other languages
Japanese (ja)
Inventor
Toru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8516079A priority Critical patent/JPS568841A/en
Publication of JPS568841A publication Critical patent/JPS568841A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable the easy measurement of deep level of a semiconductor without the formation of crystal defect by a method wherein light pulses obtained from a laser beam are applied to the semiconductor, and the difference between two transient capacities of p-n junction at two optional times is detected. CONSTITUTION:A laser beam generated in a laser source 1 of krypton ion laser, etc., is converted into light pulses through a mechanical chopper or an ultrasonic wave modulator 2, the diameter of pulses are downed by lenses 3, 4 and are applied through an optical window 7 on the face of a sample 5 arranged in a cryostat 6. Generated transient response variations of p-n junction capacity in the sample as time goes by are applied to a capacitance meter 8, and variations DELTAC are detected by a difference meter 9 to send for a CRT device 12. Transferring minutely the cryostat 6 at this time with an XY transferring table 10, voltage 11 proportional to the variations DELTAC can be obtained. Using the result, the luminance of device 12 is modulated to display the space distribution of deep level values.
JP8516079A 1979-07-04 1979-07-04 Measuring method of micro probe deep level Pending JPS568841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8516079A JPS568841A (en) 1979-07-04 1979-07-04 Measuring method of micro probe deep level

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8516079A JPS568841A (en) 1979-07-04 1979-07-04 Measuring method of micro probe deep level

Publications (1)

Publication Number Publication Date
JPS568841A true JPS568841A (en) 1981-01-29

Family

ID=13850911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8516079A Pending JPS568841A (en) 1979-07-04 1979-07-04 Measuring method of micro probe deep level

Country Status (1)

Country Link
JP (1) JPS568841A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922337A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Interfacial electrical conduction evaluation method
JPS59114834A (en) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol Method for measuring deep impurity level or crystal defect level contained in semiconductor device
JPH03217037A (en) * 1990-01-22 1991-09-24 Nec Corp Measuring apparatus for semiconductor element
CN100449305C (en) * 2004-12-09 2009-01-07 中国科学院半导体研究所 An Optical Transient Automatic Test System

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922337A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Interfacial electrical conduction evaluation method
JPS59114834A (en) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol Method for measuring deep impurity level or crystal defect level contained in semiconductor device
JPH03217037A (en) * 1990-01-22 1991-09-24 Nec Corp Measuring apparatus for semiconductor element
CN100449305C (en) * 2004-12-09 2009-01-07 中国科学院半导体研究所 An Optical Transient Automatic Test System

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